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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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1N4148-LFR датащи(PDF) 1 Page - Frontier Electronics. |
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1N4148-LFR датащи(HTML) 1 Page - Frontier Electronics. |
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1 / 2 page  1N4148-LFR Page: 1 Frontier Electronics Corp. 667 E. COCHRAN STREET, SIMI VALLEY, CA 93065 TEL: (805) 522-9998 FAX: (805) 522-9989 E-mail: frontiersales@frontierusa.com Web: http://www.frontierusa.com SILICON EPITAXIAL PLANAR DIODE 1N4148-LFR FEATURES FAST SWITCHING SMALL SIZE ROHS MECHANICAL DATA CASE: GLASS, DO35, DIMENSIONS IN MILLIMETERS LEADS: SOLDERABLE PER MIL-STD-202, METHOD 208 POLARITY: CATHODE INDICATED BY COLOR BAND WEIGHT: 0.13 GRAMS RATINGS SYMBOL 1N4148-LFR UNITS REVERSE VOLTAGE VR 75 V PEAK REVERSE VOLTAGE VRM 100 V RECTIFIED CURRENT (AVERAGE) HALF WAVE RECTIFICATION WITH RESIST LOAD AT Tamb=25 ºC AND f ≥ 50HZ (NOTE 1) IO 150 mA SURGE FORWARD CURRENT AT T<1 s AND TJ=25 ºC IFSM 500 mA POWER DISSIPATION AT Tamb=25 ºC PTOT 500 mW JUNCTION TEMPERATURE TJ 200 ºC STORAGE TEMPERATURE RANGE TS - 55 TO + 200 ºC ELECTRICAL CHARACTERISTICS (AT TA =25°C UNLESS OTHERWISE NOTED) CHARACTERISTICS @ TJ ＝25 ºC SYMBOL MIN TYP MAX UNITS FORWARD VOLTAGE AT IF=10mA VF - - 1 V LEAKAGE CURRENT AT VR=20V AT VR=75V AT VR=20V TJ=150 ºC IR IR IR - - - - - - 25 5 50 nA μA μA REVERSE BREAKDOWN VOLTAGE TESTED WITH 100 μA PULSES VR 100 - - V CAPACITANCE AT VF=VR=0 CTOT - - 4 PF VOLTAGE RISE WHEN SWITCHING ON TESTED WITH 50mA FORWARD PULSES TP=0.1 μS RISE TIME ＜30ns F P=5 TO 100 KHZ VFR - - 2.5 V REVERSE RECOVERY TIME FROM IF=10mA TO IR=1mA VR=6V RL=100Ω TRR - - 4 nS THERMAL RESISTANCE JUNCTION TO AMBIENT AIR (NOTE 1) RTHA - - 0.35 K / mW RECTIFICATION EFFICIENCY AT f =100 MHZ VRF=2V NV 0.45 - - - NOTE: 1. LEADS KEPT AT AMBIENT TEMP. AT 8mm LENGTH 0.52 ∅ 27.5 MIN 1.9 ∅ 3.9 |
Аналогичный номер детали - 1N4148-LFR |
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Аналогичное описание - 1N4148-LFR |
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