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CSD16327Q3 датащи(PDF) 5 Page - Texas Instruments

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номер детали CSD16327Q3
подробное описание детали  N-Channel NexFET??Power MOSFET
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производитель  TI1 [Texas Instruments]
домашняя страница  http://www.ti.com
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CSD16327Q3 датащи(HTML) 5 Page - Texas Instruments

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0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
−75
−25
25
75
125
175
TC - Case Temperature - ºC
ID =24A
VGS = 4.5V
G001
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
VSD − Source-to-Drain Voltage - V
TC = 25°C
TC = 125°C
G001
0.001
0.01
0.1
1
10
100
1000
2400
0.01
0.1
1
10
100 200
VDS - Drain-to-Source Voltage - V
1ms
10ms
100ms
1s
DC
Single Pulse
Typical RthetaJA = 143ºC/W(min Cu)
G001
5
10
100
0.01
0.1
1
10
t(AV) - Time in Avalanche - ms
TC = 125°C
TC = 25°C
G001
0.0
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30.0
40.0
50.0
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80.0
−50
−25
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75
100
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175
TC - Case Temperature - ºC
G001
CSD16327Q3
www.ti.com
SLPS371
– DECEMBER 2011
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
Figure 8. Normalized On Resistance vs. Temperature
Figure 9. Typical Diode Forward Voltage
Figure 10. Maximum Safe Operating Area
Figure 11. Single Pulse Unclamped Inductive Switching
Figure 12. Maximum Drain Current vs. Temperature
Copyright
© 2011, Texas Instruments Incorporated
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