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CSD18501Q5A датащи(PDF) 5 Page - Texas Instruments

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номер детали CSD18501Q5A
подробное описание детали  40V N-Channel NexFET??Power MOSFETs
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производитель  TI1 [Texas Instruments]
домашняя страница  http://www.ti.com
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CSD18501Q5A датащи(HTML) 5 Page - Texas Instruments

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0.0
20.0
40.0
60.0
80.0
100.0
120.0
−50
−25
0
25
50
75
100
125
150
175
TC - Case Temperature - ºC
G001
0.01
0.1
1
10
100
1000
2000
0.01
0.1
1
10
50
VDS - Drain-to-Source Voltage - V
1ms
10ms
100ms
1s
DC
Single Pulse
Typical RthetaJA =97ºC/W(min Cu)
G001
10
100
200
0.01
0.1
1
2
TAV - Time in Avalanche - mS
TC = 25ºC
TC = 125ºC
G001
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
−75
−25
25
75
125
175
TC - Case Temperature - ºC
VGS = 4.5V
VGS = 10V
ID =25A
G001
0.0001
0.001
0.01
0.1
1
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100
0
0.2
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VSD − Source-to-Drain Voltage - V
TC = 25°C
TC = 125°C
G001
CSD18501Q5A
www.ti.com
SLPS319A – JUNE 2012 – REVISED JUNE 2012
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 8. Normalized On-State Resistance vs. Temperature
Figure 9. Typical Diode Forward Voltage
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 10. Maximum Safe Operating Area
Figure 11. Single Pulse Unclamped Inductive Switching
TEXT ADDED FOR SPACING
Figure 12. Maximum Drain Current vs. Temperature
Copyright © 2012, Texas Instruments Incorporated
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