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CSD25401Q3 датащи(PDF) 1 Page - Texas Instruments

номер детали CSD25401Q3
подробное описание детали  P-Channel NexFET??Power MOSFETs
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производитель  TI1 [Texas Instruments]
домашняя страница  http://www.ti.com
Logo TI1 - Texas Instruments

CSD25401Q3 датащи(HTML) 1 Page - Texas Instruments

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1
S
S
S
S
S
5
G
6
D
7
D
8
D
4
3
2
−VGS − GatetoSourceVoltage − V
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
9
10
G006
TC =125 C
°
TC =25 C
°
ID = −10A
Qg − GateCharge − nC
0
1
2
3
4
5
6
0
2
4
6
8
12
16
G003
ID
DS
= −10A
V
= −10V
14
10
7
8
9
10
CSD25401Q3
www.ti.com
SLPS211B – AUGUST 2009 – REVISED OCTOBER 2010
P-Channel NexFET™ Power MOSFETs
Check for Samples: CSD25401Q3
1
FEATURES
Table 1. PRODUCT SUMMARY
2
Ultra Low Qg and Qgd
VDS
Drain to Source Voltage
–20
V
Low Thermal Resistance
Qg
Gate Charge Total (4.5V)
8.8
nC
Low RDS(on)
Qgd
Gate Charge Gate to Drain
2.1
nC
Pb Free Terminal Plating
VGS = –2.5V
13.5
m
RDS(on)
Drain to Source On Resistance
RoHS Compliant
VGS = –4.5V
8.8
m
Halogen Free
Vth
Threshold Voltage
–0.85
V
SON 3.3mm x 3.3mm Plastic Package
ORDERING INFORMATION
Device
Package
Media
Qty
Ship
APPLICATIONS
SON 3 × 3 Plastic
13-inch
Tape and
DC-DC Converters
CSD25401Q3
2500
Package
reel
Reel
Battery Management
Load Switch
ABSOLUTE MAXIMUM RATINGS
Battery Protection
TA = 25°C unless otherwise stated
VALUE
UNIT
VDS
Drain to Source Voltage
–20
V
DESCRIPTION
VGS
Gate to Source Voltage
+12 / -12
V
Continuous Drain Current, TC = 25°C
–60
A
The NexFET™ power MOSFET has been designed
ID
to
minimize
losses
in
power
conversion
load
Continuous Drain Current(1)
–14
A
management applications. The SON 3×3 package
IDM
Pulsed Drain Current, TA = 25°C
(2)
–82
A
offers excellent thermal performance for the size of
PD
Power Dissipation(1)
2.8
W
the package.
TJ,
Operating Junction and Storage
–55 to 150
°C
TSTG
Temperature Range
Top View
(1) RqJA = 45°C/W on 1inch
2 Cu (2 oz.) on 0.060" thick FR4 PCB.
(2) Pulse width
≤300µs , duty cycle ≤2%
RDS(ON) vs VGS
Gate Charge
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
NexFET is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Copyright © 2009–2010, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.


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