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CSD25401Q3 датащи(PDF) 1 Page - Texas Instruments |
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CSD25401Q3 датащи(HTML) 1 Page - Texas Instruments |
1 / 11 page 1 S S S S S 5 G 6 D 7 D 8 D 4 3 2 −VGS − GatetoSourceVoltage − V 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9 10 G006 TC =125 C ° TC =25 C ° ID = −10A Qg − GateCharge − nC 0 1 2 3 4 5 6 0 2 4 6 8 12 16 G003 ID DS = −10A V = −10V 14 10 7 8 9 10 CSD25401Q3 www.ti.com SLPS211B – AUGUST 2009 – REVISED OCTOBER 2010 P-Channel NexFET™ Power MOSFETs Check for Samples: CSD25401Q3 1 FEATURES Table 1. PRODUCT SUMMARY 2 • Ultra Low Qg and Qgd VDS Drain to Source Voltage –20 V • Low Thermal Resistance Qg Gate Charge Total (4.5V) 8.8 nC • Low RDS(on) Qgd Gate Charge Gate to Drain 2.1 nC • Pb Free Terminal Plating VGS = –2.5V 13.5 m Ω RDS(on) Drain to Source On Resistance • RoHS Compliant VGS = –4.5V 8.8 m Ω • Halogen Free Vth Threshold Voltage –0.85 V • SON 3.3mm x 3.3mm Plastic Package ORDERING INFORMATION Device Package Media Qty Ship APPLICATIONS SON 3 × 3 Plastic 13-inch Tape and • DC-DC Converters CSD25401Q3 2500 Package reel Reel • Battery Management • Load Switch ABSOLUTE MAXIMUM RATINGS • Battery Protection TA = 25°C unless otherwise stated VALUE UNIT VDS Drain to Source Voltage –20 V DESCRIPTION VGS Gate to Source Voltage +12 / -12 V Continuous Drain Current, TC = 25°C –60 A The NexFET™ power MOSFET has been designed ID to minimize losses in power conversion load Continuous Drain Current(1) –14 A management applications. The SON 3×3 package IDM Pulsed Drain Current, TA = 25°C (2) –82 A offers excellent thermal performance for the size of PD Power Dissipation(1) 2.8 W the package. TJ, Operating Junction and Storage –55 to 150 °C TSTG Temperature Range Top View (1) RqJA = 45°C/W on 1inch 2 Cu (2 oz.) on 0.060" thick FR4 PCB. (2) Pulse width ≤300µs , duty cycle ≤2% RDS(ON) vs VGS Gate Charge 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2009–2010, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
Аналогичный номер детали - CSD25401Q3 |
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Аналогичное описание - CSD25401Q3 |
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