поискавой системы для электроныых деталей |
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SI7456DDP датащи(PDF) 5 Page - Vishay Siliconix |
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SI7456DDP датащи(HTML) 5 Page - Vishay Siliconix |
5 / 13 page Document Number: 67869 S12-1261-Rev. A, 21-May-12 www.vishay.com 5 Vishay Siliconix Si7456DDP New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* TC - Case Temperature (°C) 0 6 12 18 24 30 0 25 50 75 100 125 150 Power, Junction-to-Case TC - Case Temperature (°C) 0 9 18 27 36 45 0 25 50 75 100 125 150 Power, Junction-to-Ambient 0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) |
Аналогичный номер детали - SI7456DDP |
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Аналогичное описание - SI7456DDP |
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