ST3407SRG datasheet(2/6 Pages) STANSON

номер детали	ST3407SRG

подробное описание детали	ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

Download	6 Pages

Scroll/Zoom	100%

производитель	STANSON [Stanson Technology]

домашняя страница	http://www.stansontech.com

Logo

2 / 6 page

ST3407SRG

P Channel Enhancement Mode MOSFET

-3.6A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST3407SRG 2006. V1

ABSOULTE MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Typical

Unit

Drain-Source Voltage

VDSS

-30

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain CurrentTJ=150℃)

TA=25℃

TA=70℃

ID

-3.6

-3.0

A

Pulsed Drain Current

IDM

-15

A

Continuous Source Current (Diode Conduction)

IS

-1.0

A

Power Dissipation

TA=25℃

TA=70℃

PD

1.20

0.8

W

Operation Junction Temperature

TJ

150

℃

Storage Temperature Range

TSTG

-55/150

℃

Thermal Resistance-Junction to Ambient

RθJA

120

℃/W

Аналогичный номер детали - ST3407SRG

производитель	номер детали	датащи	подробное описание детали
VBsemi Electronics Co.,...	ST3407SRG	490Kb / 9P	P-Channel 30 V (D-S) MOSFET

More results

Аналогичное описание - ST3407SRG

производитель	номер детали	датащи	подробное описание детали
Stanson Technology	STP9527	927Kb / 7P	STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	ST2315SRG	218Kb / 6P	ST2315SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP7401	461Kb / 6P	STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	ST3401SRG	212Kb / 6P	ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
	STP9437	375Kb / 6P	STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP4435A	311Kb / 6P	STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	ST2341A	582Kb / 6P	ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP6621	452Kb / 6P	STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
Shenzhen Huazhimei Semi...	HM1P10MR	763Kb / 5P	P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
Stanson Technology	STP4803	697Kb / 7P	STP4803 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

More results

ST3407SRG датащи(PDF) 2 Page - Stanson Technology

ST3407SRG датащи(HTML) 2 Page - Stanson Technology

Аналогичный номер детали - ST3407SRG

Аналогичное описание - ST3407SRG

Html Pages

1 2 3 4 5 6

датащи скачать

ссылки URL