STN4822 datasheet(6/6 Pages) STANSON | STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.

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STN4822 датащи(PDF) 6 Page - Stanson Technology

номер детали	STN4822

подробное описание детали	STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.

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производитель	STANSON [Stanson Technology]

домашняя страница	http://www.stansontech.com

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STN4

STN4

STN4

STN4822

822

822

822

Dual N Channel Enhancement Mode MOSFET

8.5A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

Copyright © 2007, Stanson Corp.

STN4822 2009. V1

SOP-8

SOP-8

SOP-8

SOP-8 PACKAGE

PACKAGE

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PACKAGE OUTLINE

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Аналогичный номер детали - STN4822

производитель	номер детали	датащи	подробное описание детали
Stanson Technology	STN4826	686Kb / 6P	Dual N Channel Enhancement Mode MOSFET
Stanson Technology	STN4828	511Kb / 6P	Dual N Channel Enhancement Mode MOSFET
VBsemi Electronics Co.,...	STN4828	1Mb / 9P	Dual N-Channel 60 V (D-S) 175 째C MOSFET

Аналогичное описание - STN4822

производитель	номер детали	датащи	подробное описание детали
Stanson Technology	STN4488L	644Kb / 7P	STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
	STN9926	648Kb / 7P	The STN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
	STN9926AA	233Kb / 7P	The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
	STP4931	334Kb / 6P	STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
	STP9434	314Kb / 6P	STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
	STP4403	321Kb / 6P	STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
	STP9235	331Kb / 6P	STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
	STN4346	352Kb / 7P	STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4426	362Kb / 6P	STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	ST3406SRG	325Kb / 6P	ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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