STP6621 datasheet(2/6 Pages) STANSON

номер детали	STP6621

подробное описание детали	STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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производитель	STANSON [Stanson Technology]

домашняя страница	http://www.stansontech.com

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STP6621

P Channel Enhancement Mode MOSFET

-18.0A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

.

STP6621 2010. V1

ABSOULTE MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Typical

Unit

Drain-Source Voltage

VDSS

-60

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current

(TJ=150℃)

TA=25℃

TA=70℃

ID

-18.0

-11.0

A

Pulsed Drain Current

IDM

-50

A

Continuous Source Current

(Diode Conduction)

IS

-4.3

A

Power Dissipation

TA=25℃

TA=70℃

PD

3.1

2.0

W

Operation Junction Temperature

TJ

-55/150

℃

Storgae Temperature Range

TSTG

-55/150

℃

Thermal Resistance-Junction to Ambient

RθJA

70

℃/W

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