STP7401 datasheet(5/6 Pages) STANSON | STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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STP7401 датащи(PDF) 5 Page - Stanson Technology

номер детали	STP7401

подробное описание детали	STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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производитель	STANSON [Stanson Technology]

домашняя страница	http://www.stansontech.com

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STP7401

P Channel Enhancement Mode MOSFET

-2.8A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

STP7401 2005. V1

TYPICAL CHARACTERICTICS (25℃ unless otherwise noted)

Аналогичный номер детали - STP7401

производитель	номер детали	датащи	подробное описание детали
SHENZHEN DOINGTER SEMIC...	STP70L60	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
VBsemi Electronics Co.,...	STP70N06FI	2Mb / 8P	N-Channel 60 V (D-S) MOSFET
STMicroelectronics	STP70N10F4	974Kb / 18P	N-channel 100 V, 0.015 廓, 60 A, STripFET??DeepGATE??Power MOSFET in TO-220, DPAK, TO-247, D2PAK
VBsemi Electronics Co.,...	STP70N10F4	2Mb / 7P	N-Channel 100-V (D-S) MOSFET
STMicroelectronics	STP70NF03L	255Kb / 9P	N-CHANNEL 30V - 0.008ohm - 70A TO-220/I2PAK LOW GATE CHARGE STripFET??POWER MOSFET

Аналогичное описание - STP7401

производитель	номер детали	датащи	подробное описание детали
Stanson Technology	ST3407SRG	184Kb / 6P	ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP9527	927Kb / 7P	STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	ST2315SRG	218Kb / 6P	ST2315SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	ST3401SRG	212Kb / 6P	ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
	STP9437	375Kb / 6P	STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP4435A	311Kb / 6P	STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	ST2341A	582Kb / 6P	ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP6621	452Kb / 6P	STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
Shenzhen Huazhimei Semi...	HM1P10MR	763Kb / 5P	P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
Stanson Technology	STP4803	697Kb / 7P	STP4803 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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