STP9434 datasheet(4/6 Pages) STANSON | STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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STP9434 датащи(PDF) 4 Page - Stanson Technology

номер детали	STP9434

подробное описание детали	STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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производитель	STANSON [Stanson Technology]

домашняя страница	http://www.stansontech.com

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STP

STP

STP

STP9434

9434

9434

9434

P Channel Enhancement Mode MOSFET

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7.2A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

Copyright © 2007, Stanson Corp.

STP9434 2010. V1

TYPICAL

TYPICAL

TYPICAL

TYPICAL CHARACTERICTICS

CHARACTERICTICS

CHARACTERICTICS

CHARACTERICTICS

Аналогичный номер детали - STP9434

производитель	номер детали	датащи	подробное описание детали
Stanson Technology	STP9435	383Kb / 7P	P Channel Enhancement Mode MOSFET
VBsemi Electronics Co.,...	STP9435	860Kb / 8P	P-Channel 30-V (D-S) MOSFET
	STP9435A	860Kb / 8P	P-Channel 30-V (D-S) MOSFET
	STP9435M-TRG	860Kb / 8P	P-Channel 30-V (D-S) MOSFET
Stanson Technology	STP9435S8RG	383Kb / 7P	P Channel Enhancement Mode MOSFET

Аналогичное описание - STP9434

производитель	номер детали	датащи	подробное описание детали
Stanson Technology	STP4403	321Kb / 6P	STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
	STP9235	331Kb / 6P	STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
	STP4931	334Kb / 6P	STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
	STN9926	648Kb / 7P	The STN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
	STN4488L	644Kb / 7P	STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
	STN9926AA	233Kb / 7P	The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
	ST2319SRG	229Kb / 8P	ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
	STP4407	545Kb / 6P	The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
ACE Technology Co., LTD...	ACE632	1Mb / 11P	The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. VER 1.3
Shenzhen Huazhimei Semi...	HM1P10MR	763Kb / 5P	P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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