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TC74HC03AP датащи(PDF) 3 Page - Toshiba Semiconductor

номер детали TC74HC03AP
подробное описание детали  Quad 2-Input NAND Gate (open drain)
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC74HC03AP датащи(HTML) 3 Page - Toshiba Semiconductor

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TC74HC03AP/AF
2012-02-29
3
Electrical Characteristics
DC Characteristics
Test Condition
Ta
= 25°C
Ta
= −40~85°C
Characteristics
Symbol
VCC
(V)
Min
Typ.
Max
Min
Max
Unit
High-level input
voltage
VIH
⎯
2.0
4.5
6.0
1.50
3.15
4.20
⎯
⎯
⎯
⎯
⎯
⎯
1.50
3.15
4.20
⎯
⎯
⎯
V
Low-level input
voltage
VIL
⎯
2.0
4.5
6.0
⎯
⎯
⎯
⎯
⎯
⎯
0.50
1.35
1.80
⎯
⎯
⎯
0.50
1.35
1.80
V
IOL = 20 μA
2.0
4.5
6.0
⎯
⎯
⎯
0.0
0.0
0.0
0.1
0.1
0.1
⎯
⎯
⎯
0.1
0.1
0.1
Low-level output
voltage
VOL
VIN
= VIH or
VIL
IOL = 4 mA
IOL = 5.2 mA
4.5
6.0
⎯
⎯
0.17
0.18
0.26
0.26
⎯
⎯
0.33
0.33
V
Output off-state
current
IOZ
VIN = VIH or VIL
VOUT = VCC
6.0
⎯
⎯
±0.5
⎯
±5.0
μA
Input leakage
current
IIN
VIN = VCC or GND
6.0
⎯
⎯
±0.1
⎯
±1.0
μA
Quiescent supply
current
ICC
VIN = VCC or GND
6.0
⎯
⎯
1.0
⎯
10.0
μA
AC Characteristics (CL = 15 pF, VCC = 5 V, Ta = 25°C, input: tr = tf = 6 ns)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Output transition time
tTHL
⎯
⎯
4
8
ns
Propagation delay time
tpLZ
RL = 1 kΩ
⎯
5
12
ns
Propagation delay time
tpZL
RL = 1 kΩ
⎯
5
12
ns


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