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1SS426 датащи(PDF) 1 Page - Toshiba Semiconductor |
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1SS426 датащи(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page 1SS426 2008-01-30 1 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS426 Ultra-High Speed Switching Applications Compact 2-pin package: Ideal for high-density mounting Low forward voltage : VF (3) = 0.98 V (typ.) Fast reverse recovery time: trr = 1.6 ns (typ.) Small total capacitance : CT = 0.5 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 200 mA Average forward current IO 100 mA Surge current (10 ms) IFSM 1 A Power dissipation P 150 * mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to 150 °C * : Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Cu pad dimension of 4 mm × 4 mm. Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit VF (1) ― IF = 1 mA ― 0.62 ― VF (2) ― IF = 10 mA ― 0.75 ― Forward voltage VF (3) ― IF = 100 mA ― 0.98 1.20 V IR (1) ― VR = 30 V ― ― 0.1 Reverse current IR (2) ― VR = 80 V ― ― 0.5 μA Total capacitance CT ― VR = 0, f = 1 MHz ― 0.5 ― pF Reverse recovery time trr ― IF = 10mA, Fig.1 ― 1.6 ― ns JEDEC ― JEITA ― TOSHIBA 1-1K1A Weight: 1.1 mg (typ.) Unit: mm |
Аналогичный номер детали - 1SS426 |
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Аналогичное описание - 1SS426 |
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