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TPD4146K датащи(PDF) 11 Page - Toshiba Semiconductor |
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TPD4146K датащи(HTML) 11 Page - Toshiba Semiconductor |
11 / 25 page TPD4146K 2012-02-09 11 Description of Protection Function (1) Over-current protection The IC incorporates an over-current protection circuit to protect itself against over current at startup or when a motor is locked. This protection function detects voltage generated in the current-detection resistor connected to the RS pin. When this voltage exceeds VR (= 0.5 V typ.), the high-side IGBT output, which is on, temporarily shuts down after a delay time, preventing any additional current from flowing to the IC. The next PWM ON signal releases the shutdown state. (2) Under-voltage protection The IC incorporates under-voltage protection circuits to prevent the IGBT from operating in unsaturated mode when the VCC voltage or the VBS voltage drops. When the VCC power supply falls to the IC internal setting VCCUVD (= 11 V typ.), all IGBT outputs shut down regardless of the input. This protection function has hysteresis. When the VCC power supply reaches 0.5 V higher than the shutdown voltage (VCCUVR (= 11.5 V typ.)), the IC is automatically restored and the IGBT is turned on/off again by the input. When the VBS supply voltage drops VBSUVD (= 10 V typ.), the high-side IGBT output shuts down. When the VBS supply voltage reaches 0.5 V higher than the shutdown voltage (VBSUVR (= 10.5 V typ.)), the IGBT is turned on/off again by the input signal. (3) Thermal shutdown The IC incorporates a thermal shutdown circuit to protect itself against excessive rise in temperature. When the temperature of this chip rises to the internal setting TSD due to external causes or internal heat generation, all IGBT outputs shut down regardless of the input. This protection function has hysteresis ΔTSD (= 50 °C typ.). When the chip temperature falls to TSD − ΔTSD, the chip is automatically restored and the IGBT is turned on/off again by the input. Because the chip contains just one temperature-detection location, when the chip heats up due to the IGBT for example, the distance between the detection location and the IGBT (the source of the heat) can cause differences in the time taken for shutdown to occur. Therefore, the temperature of the chip may rise higher than the initial thermal shutdown temperature. Duty ON Over-current setting value PWM reference voltage Duty OFF toff ton ton delay time Over-current shutdown Retry Triangle wave Output current |
Аналогичный номер детали - TPD4146K |
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Аналогичное описание - TPD4146K |
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