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TPD4146K датащи(PDF) 11 Page - Toshiba Semiconductor

номер детали TPD4146K
подробное описание детали  TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPD4146K датащи(HTML) 11 Page - Toshiba Semiconductor

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TPD4146K
2012-02-09
11
Description of Protection Function
(1)
Over-current protection
The IC incorporates an over-current protection circuit to protect itself against over current at startup
or when a motor is locked. This protection function detects voltage generated in the current-detection
resistor connected to the RS pin. When this voltage exceeds VR (= 0.5 V typ.), the high-side IGBT
output, which is on, temporarily shuts down after a delay time, preventing any additional current
from flowing to the IC. The next PWM ON signal releases the shutdown state.
(2)
Under-voltage protection
The IC incorporates under-voltage protection circuits to prevent the IGBT from operating in
unsaturated mode when the VCC voltage or the VBS voltage drops.
When the VCC power supply falls to the IC internal setting VCCUVD (= 11 V typ.), all IGBT outputs
shut down regardless of the input. This protection function has hysteresis. When the VCC power
supply reaches 0.5 V higher than the shutdown voltage (VCCUVR (= 11.5 V typ.)), the IC is
automatically restored and the IGBT is turned on/off again by the input.
When the VBS supply voltage drops VBSUVD (= 10 V typ.), the high-side IGBT output shuts down.
When the VBS supply voltage reaches 0.5 V higher than the shutdown voltage (VBSUVR (= 10.5 V
typ.)), the IGBT is turned on/off again by the input signal.
(3)
Thermal shutdown
The IC incorporates a thermal shutdown circuit to protect itself against excessive rise in temperature.
When the temperature of this chip rises to the internal setting TSD due to external causes or internal
heat generation, all IGBT outputs shut down regardless of the input. This protection function has
hysteresis
ΔTSD (= 50 °C typ.). When the chip temperature falls to TSD − ΔTSD, the chip is
automatically restored and the IGBT is turned on/off again by the input.
Because the chip contains just one temperature-detection location, when the chip heats up due to the
IGBT for example, the distance between the detection location and the IGBT (the source of the heat)
can cause differences in the time taken for shutdown to occur. Therefore, the temperature of the chip
may rise higher than the initial thermal shutdown temperature.
Duty ON
Over-current setting value
PWM reference voltage
Duty OFF
toff
ton
ton
delay time
Over-current shutdown
Retry
Triangle wave
Output current


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