поискавой системы для электроныых деталей |
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STPS15H100C-Y датащи(PDF) 2 Page - STMicroelectronics |
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STPS15H100C-Y датащи(HTML) 2 Page - STMicroelectronics |
2 / 7 page Characteristics STPS15H100C-Y 2/7 Doc ID 17686 Rev 1 1 Characteristics When the diodes 1 and 2 are used simultaneously : Δ T j(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) To evaluate the conduction losses use the following equation: P = 0.58 x IF(AV) + 0.012 IF 2 (RMS) Table 2. Absolute Ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V IF(RMS) Forward rms current 10 A IF(AV) Average forward current Tc = 135 °C Per diode 7.5 A δ = 0.5 Per device 15 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 75 A IRRM Peak repetitive reverse current tp = 2 µs square F= 1 kHz 1 A PARM Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 6600 W Tstg Storage temperature range - 65 to + 175 °C Tj Operating junction temperature (1) range 1. condition to avoid thermal runaway for a diode on its own heatsink -40 to +175 °C dV/dt Critical rate of rise of reverse voltage 10000 V/µs Table 3. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case Per diode 4 °C/W Total 2.4 Rth(c) Coupling 0.7 Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) 1. Pulse test: tp = 380 µs, δ < 2% Reverse leakage current Tj = 25 °C VR = VRRM 3µA Tj = 125 °C 1.3 4 mA VF( (1)) Forward voltage drop Tj = 25 °C IF = 7.5 A 0.8 V Tj = 125 °C IF = 7.5 A 0.62 0.67 Tj = 25 °C IF = 12 A 0.85 Tj = 125 °C IF = 12 A 0.68 0.73 Tj = 25 °C IF = 15 A 0.89 Tj = 125 °C IF = 15 A 0.71 0.76 dPtot dTj < 1 Rth(j-a) |
Аналогичный номер детали - STPS15H100C-Y |
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Аналогичное описание - STPS15H100C-Y |
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