Characteristics

STPS15H100C-Y

2/7

Doc ID 17686 Rev 1

1

Characteristics

When the diodes 1 and 2 are used simultaneously :

Δ T

To evaluate the conduction losses use the following equation:

2

(RMS)

Table 2.

Absolute Ratings (limiting values, per diode)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

100

V

10

A

Average forward current

7.5

A

δ = 0.5

Per device

15

Surge non repetitive forward current

75

A

Peak repetitive reverse current

1

A

Repetitive peak avalanche power

6600

W

Storage temperature range

- 65 to + 175

°C

1.

condition to avoid thermal runaway for a diode on its own heatsink

-40 to +175

°C

dV/dt

Critical rate of rise of reverse voltage

10000

V/µs

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Junction to case

Per diode

4

°C/W

Total

2.4

Coupling

0.7

Table 4.

Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

1.

Pulse test: tp = 380 µs,

δ < 2%

Reverse leakage

current

3µA

1.3

4

mA

(1))

Forward voltage drop

0.8

V

0.62

0.67

0.85

0.68

0.73

0.89

0.71

0.76

dPtot

dTj

<

1

Rth(j-a)