© 2011 Fairchild Semiconductor Corporation

www.fairchildsemi.com

1N4447 Rev. A0

1

August 2011

1N4447

Small Signal Diode

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 200 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle

operations.

Thermal Characteristics

Symbol

Parameter

Value

Units

Maximum Repetitive Reverse Voltage

100

V

Average Rectified Forward Current

200

mA

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

Pulse Width = 1.0 microsecond

1.0

4.0

A

A

Storage Temperature Range

-65 to +200

°C

Operating Junction Temperature

175

°C

Symbol

Parameter

Value

Units

Power Dissipation

500

mW

Thermal Resistance, Junction to Ambient

300

°C/W

Symbol

Parameter

Test Conditions

Min.

Max.

Units

Breakdown Voltage

100

75

V

V

Forward Voltage

1.0

V

Reverse Leakage

25

50

nA

μA

Total Capacitance

2.0

pF

4.0

ns

DO-35

Color Band Denotes Cathode