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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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FDS8935 датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDS8935 датащи(HTML) 2 Page - Fairchild Semiconductor |
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2 / 6 page  www.fairchildsemi.com 2 ©2010 Fairchild Semiconductor Corporation FDS8935 Rev.C Electrical Characteristics T J = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V -80 V ΔBV DSS ΔT J Breakdown Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C -61 mV/°C IDSS Zero Gate Voltage Drain Current VDS = -64 V, VGS = 0 V -1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA-1 -1.8 -3 V ΔV GS(th) ΔT J Gate to Source Threshold Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C 5 mV/°C rDS(on) Static Drain to Source On Resistance VGS = -10 V, ID = -2.1 A 148 183 m Ω VGS = -4.5 V, ID = -1.9 A 176 247 VGS = -10 V, ID = -2.1 A,TJ = 125 °C 249 308 gFS Forward Transconductance VDS = -10 V, ID = -2.1 A 6.4 S Ciss Input Capacitance VDS = -40 V, VGS = 0 V, f = 1MHz 661 879 pF Coss Output Capacitance 47 63 pF Crss Reverse Transfer Capacitance 24 36 pF Rg Gate Resistance 6 Ω td(on) Turn-On Delay Time VDD = -40 V, ID = -2.1 A, VGS = -10 V, RGEN = 6 Ω 510 ns tr Rise Time 310 ns td(off) Turn-Off Delay Time 22 36 ns tf Fall Time 310 ns Qg(TOT) Total Gate Charge VGS = 0 V to -10 V VDD = -40 V, ID = -2.1 A 13 19 nC Qg(TOT) Total Gate Charge VGS = 0 V to -5 V 7 10 nC Qgs Gate to Source Charge 1.6 nC Qgd Gate to Drain “Miller” Charge 2.6 nC VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = -2.1 A (Note 2) -1.8 -1.3 V VGS = 0 V, IS = -1.3 A (Note 2) -0.8 -1.2 trr Reverse Recovery Time IF = -2.1 A, di/dt = 300 A/μs 19 30 ns Qrr Reverse Recovery Charge 34 54 nC NOTES: 1. RθJA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C, L = 3.0 mH, IAS = -5.0 A, VDD = -80V, VGS = -10V. b)135 °C/W when mounted on a minimun pad a)78 °C/W when mounted on a 1 in2 pad of 2 oz copper |
Аналогичный номер детали - FDS8935 |
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Аналогичное описание - FDS8935 |
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