MJ10000

5

Motorola Bipolar Power Transistor Device Data

SWITCHING TIMES NOTE (continued)

For the designer, there is minimal switching loss during

storage time and the predominant switching power losses

occur during the crossover interval and can be obtained us-

ing the standard equation from AN–222:

PSWT = 1/2 VCCIC(tc)f

In general, trv + tfi ] tc. However, at lower test currents this

relationship may not be valid.

As is common with most switching transistors, resistive

switching is specified at 25

_C and has become a benchmark

for designers. However, for designers of high frequency con-

verter circuits, the user oriented specifications which make

this a “SWITCHMODE” transistor are the inductive switching

speeds (tc and tsv) which are guaranteed at 100_C.

3

Figure 8. Turn–On Time

IC, COLLECTOR CURRENT (AMP)

2

0.7

0.1

3

20

0.2

1

5

td

tr

2

7

1

0.3

0.5

2

Figure 9. Turn–Off Time

IC, COLLECTOR CURRENT (AMP)

0.7

0.2

0.1

VBF(off) = 5 V

VCC = 250 V

IC/IB = 25

TJ = 25°C

tf

ts

0.3

0.5

VBE(off) = 5 V

VCC = 250 V

IC/IB = 25

TJ = 25°C

10

3

20

1

5

2

7

10

1

RESISTIVE SWITCHING PERFORMANCE

Figure 10. Thermal Response

t, TIME (ms)

1.0

0.01

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

1.0 k

500

Z

θJC (t) = r(t) RθJC

R

θJC = 1.0°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) Z

θJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01

SINGLE PULSE

0.1