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TS9002 датащи(PDF) 9 Page - Touchstone Semiconductor Inc

номер детали TS9002
подробное описание детали  Low-Power Single/Dual-Supply Dual Comparator with Reference
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производитель  TOUCHSTONE [Touchstone Semiconductor Inc]
домашняя страница  http://www.touchstonesemi.com
Logo TOUCHSTONE - Touchstone Semiconductor Inc

TS9002 датащи(HTML) 9 Page - Touchstone Semiconductor Inc

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TS9002
TS9002DS r1p0
Page 9
RTFDS
R1
VHB
2 x REF
R2
1.1 2
VHB
2
REF
where IREF is the primary source of current out of the
reference pin and should be maintained within the
maximum current the reference can source. It is safe
to maintain the current within 20µA. It is also
important to ensure that the current from reference is
much larger than the HYST pin input current. Given
R2 = 2.4
MΩ, the current sourced by the reference is
0.5
μA. This allows the hysteresis band and R1 to be
approximated as follows:
R1(kΩ)
V
HB(mv)
Note
the
hysteresis
is
the
same
for
both
comparators.
Board Layout and Bypassing
While power-supply bypass capacitors are not
typically required, it is good engineering practice to
use 0.1μF bypass capacitors close to the device’s
power
supply
pins
when
the
power
supply
impedance is high, the power supply leads are long,
or there is excessive noise on the power supply
traces. To reduce stray capacitance, it is also good
engineering practice to make signal trace lengths as
short as possible. Also recommended are a ground
plane and surface mount resistors and capacitors.
Window Detector
The schematic shown in Figure 3 is for a 4.5V
undervoltage
threshold
detector
and
a
5.5V
overvoltage threshold detector using the TS9002.
Resistor components R1, R2, and R3 can be
selected based on the threshold voltage desired
while resistors R4 and R5 can be selected based on
the hysteresis desired. Adding hysteresis to the
circuit will minimize chattering on the output when
the input voltage is close to the trip point. OUTA and
OUTB
generate
the
active
low
undervoltage
indication and active-low overvoltage indication,
respectively. If both OUTA and OUTB signals are
ANDed together, the resulting output of the AND
gate is an active-high, power-good signal. To design
the circuit, the following procedure needs to be
followed:
1.
As described below, determine the desired
hysteresis and select resistors R4 and R5
accordingly.
This
circuit
has
±5mV
of
hysteresis at the input where the input
voltage VIN will appear larger due to the
input resistor divider.
2.
Choosing R1. As the leakage current at the
INB- pin is less than 1nA, the current
through R1 should be at least 100nA to
minimize offset voltage errors caused by the
input leakage current. Values within 100kΩ
and 1MΩ are recommended.
In
this
example, a 294kΩ, 1% standard value
resistor is selected for R1.
3.
Calculating R2 + R3. As the input voltage
VIN rises, the overvoltage threshold should
be 5.5V. Choose R2 + R3 as follows:
R1 + R
R1 x
VOTH
VREF+VHYS
1
294kΩ x
5.5V
1.1 2V + 5mV
1
1.0
4.
Calculating R2. As the input voltage VIN falls,
the undervoltage threshold should be 4.5V.
Choose R2 as follows:
R2
(R1 + R2+ R ) x
VREF VHYS
VUTH
294k
(294kΩ + 1.0
MΩ) x
1.1 2V 5mV
4.5
294k
2.2kΩ
Figure 3. Window Detector


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