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AD586AR датащи(PDF) 3 Page - Analog Devices

номер детали AD586AR
подробное описание детали  High Precision 5 V Reference
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производитель  AD [Analog Devices]
домашняя страница  http://www.analog.com
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AD586AR датащи(HTML) 3 Page - Analog Devices

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AD586
REV. C
–3–
The following specifications are tested at the die level for AD586JCHIPS. These die are probed at 25 C
only. (TA = +25 C, VIN = +15 V unless otherwise noted)
DlE SPECIFlCATIONS
AD586JCHIPS
Parameter
Min
Typ
Max
Units
Output Voltage
4.980
5.020
V
Gain Adjustment
+6
%
–2
%
Line Regulation
10.8 V < + VIN < 36 V
100
±µV/V
Load Regulation
Sourcing 0 < IOUT < 10 mA
100
µV/mA
Sinking –10 < IOUT < 0 mA
400
µV/mA
Quiescent Current
3
mA
Short-Circuit Current-to-Ground
60
mA
NOTES
1Both V
OUT pads should be connected to the output.
Die Thickness: The standard thickness of Analog Devices Bipolar dice is 24 mils
± 2 mils.
Die Dimensions: The dimensions given have a tolerance of
± 2 mils.
Backing: The standard backside surface is silicon (not plated). Analog Devices does not
recommend gold-backed dice for most applications.
Edges: A diamond saw is used to separate wafers into dice thus providing perpendicular
edges half-way through the die.
In contrast to scribed dice, this technique provides a more uniform die shape and size. The
perpendicular edges facilitate handling (such as tweezer pick-up) while the uniform shape
and size simplifies substrate design and die attach.
Top Surface: The standard top surface of the die is covered by a layer of glassivation. All
areas are covered except bonding pads and scribe lines.
Surface Metalization: The metalization to Analog Devices bipolar dice is aluminum.
Minimum thickness is 10,000Å.
Bonding Pads: All bonding pads have a minimum size of 4 mils by 4 mils. The passivation
windows have 3.5 mils by 3.5 mils minimum.
WARNING!
ESD SENSITIVE DEVICE
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD586 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ORDERING GUIDE
Initial
Temperature
Temperature
Package
Model
1
Error
Coefficient
Range
Option
2
AD586JN
20 mV
25 ppm/
°C0°C to +70°C
N-8
AD586JQ
20 mV
25 ppm/
°C0°C to +70°C
Q-8
AD586JR
20 mV
25 ppm/
°C0°C to +70°C
SO-8
AD586KN
5 mV
15 ppm/
°C0°C to +70°C
N-8
AD586KQ
5 mV
15 ppm/
°C0°C to +70°C
Q-8
AD586KR
5 mV
15 ppm/
°C0°C to +70°C
SO-8
AD586LN
2.5 mV
5 ppm/
°C0°C to +70°C
N-8
AD586LR
2.5 mV
5 ppm/
°C0°C to +70°C
SO-8
AD586MN
2 mV
2 ppm/
°C0°C to +70°C
N-8
AD586AR
5 mV
15 ppm/
°C–40°C to +85°C
SO-8
AD586BR
2.5 mV
5 ppm/
°C–40°C to +85°C
SO-8
AD586LQ
2.5 mV
5 ppm/
°C0°C to +70°C
Q-8
AD586SQ
10 mV
20 ppm/
°C
–55
°C to +125°C
Q-8
AD586TQ
2.5 mV
10 ppm/
°C
–55
°C to +125°C
Q-8
AD586JCHIPS
20 mV
25 ppm/
°C0°C to +70°C
NOTES
1For details on grade and package offerings screened in accordance with MIL-STD-883, r efer to the Analog Devices Military
Products Databook or current AD586/883B data sheet.
2N = Plastic DIP; Q = Cerdip; SO = Small Outline IC (SOIC).


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