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MJE5851 датащи(PDF) 2 Page - Motorola, Inc |
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MJE5851 датащи(HTML) 2 Page - Motorola, Inc |
2 / 8 page MJE5850 MJE5851 MJE5852 2 Motorola Bipolar Power Transistor Device Data ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage MJE5850 (IC = 10 mA, IB = 0) MJE5851 MJE5852 VCEO(sus) 300 350 400 — — — — Vdc Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C) ICEV — — — — 0.5 2.5 mAdc Collector Cutoff Current (VCE = Rated VCEV, RBE = 50 Ω, TC = 100_C) ICER — — 3.0 mAdc Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO — — 1.0 mAdc SECOND BREAKDOWN Second Breakdown Collector Current with base forward biased IS/b See Figure 12 Clamped Inductive SOA with base reverse biased RBSOA See Figure 13 *ON CHARACTERISTICS DC Current Gain (IC = 2.0 Adc, VCE = 5 Vdc) (IC = 5.0 Adc, VCE = 5 Vdc) hFE 15 5 — — — — — Collector–Emitter Saturation Voltage (IC = 4.0 Adc, IB = 1.0 Adc) (IC = 8.0 Adc, IB = 3.0 Adc) (IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C) VCE(sat) — — — — — — 2.0 5.0 2.5 Vdc Base–Emitter Saturation Voltage (IC = 4.0 Adc, IB = 1.0 Adc) (IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C) VBE(sat) — — — — 1.5 1.5 Vdc DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz) Cob — 270 — pF SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time (VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A, tp = 50 µs, Duty Cycle v 2%) td — 0.025 0.1 µs Rise Time (VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A, tp = 50 µs, Duty Cycle v 2%) tr — 0.100 0.5 µs Storage Time (VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A, VBE(off) = 5 Vdc, tp = 50 µs, Duty Cycle v 2%) ts — 0.60 2.0 µs Fall Time (VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A, VBE(off) = 5 Vdc, tp = 50 µs, Duty Cycle v 2%) tf — 0.11 0.5 µs Inductive Load, Clamped (Table 1) Storage Time (ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A, VBE(off) = 5 Vdc, TC = 100_C) tsv — 0.8 3.0 µs Crossover Time (ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A, VBE(off) = 5 Vdc, TC = 100_C) tc — 0.4 1.5 µs Fall Time VBE(off) = 5 Vdc, TC = 100_C) tfi — 0.1 — µs Storage Time (ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A, VBE(off) = 5 Vdc, TC = 25_C) tsv — 0.5 — µs Crossover Time (ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A, VBE(off) = 5 Vdc, TC = 25_C) tc — 0.125 — µs Fall Time VBE(off) = 5 Vdc, TC = 25_C) tfi — 0.1 — µs * Pulse Test: PW = 300 µs. Duty Cycle v 2% |
Аналогичный номер детали - MJE5851 |
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Аналогичное описание - MJE5851 |
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