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ADM1051JR датащи(PDF) 3 Page - Analog Devices |
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ADM1051JR датащи(HTML) 3 Page - Analog Devices |
3 / 10 page REV. 0 ADM1051/ADM1051A –3– ABSOLUTE MAXIMUM RATINGS * (TA = 25 °C unless otherwise noted) VCC to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 V SHDN1, SHDN2 to GND . . . . . . . . –0.3 V to (V CC + 0.3 V) SENSE 1, SENSE 2 to GND . . . . . . . . . . . –0.3 V to +5.5 V FORCE 1, FORCE 2 . . . . . . . Short-Circuit to GND or VCC Continuous Power Dissipation (TA = 70 °C) . . . . . . . 650 mW 8-Lead SOIC (Derate 8.3 mW/ °C Above 70°C) Operating Temperature Range Commercial (J Version) . . . . . . . . . . . . . . . . . . 0 °C to 70°C Storage Temperature Range . . . . . . . . . . . –65 °C to +150°C Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . 300 °C *This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. THERMAL CHARACTERISTICS 8-Lead Small Outline Package: θJA = 150°C/W ORDERING GUIDE Temperature Package Package Model Range Description Option ADM1051JR 0 °C to 70°C 8-Lead SOIC R-8 ADM1051AJR 0 °C to 70°C 8-Lead SOIC R-8 PIN FUNCTION DESCRIPTIONS Pin No. Mnemonic Function 1 FORCE 2 Output of Channel 2 control amplifier to gate of external N-channel MOSFET. 2 SENSE 2 Input from source of external MOSFET to inverting input of Channel 2 control amplifier, via output voltage-setting feedback resistor network. 3 SHDN2 Digital Input. Active-low shutdown control with 50 µA internal pull-up. The output of Channel 2 control amplifier goes to ground when SHDN2 is taken low. 4 GND Device Ground Pin. 5 SHDN1 Digital Input. Active-low shutdown con- trol with 50 µA internal pull-up. See text for more details of SHDN1 functionality. 6 SENSE 1 Input from source of external MOSFET to inverting input of Channel 1 control ampli- fier, via output voltage-setting feedback resistor network. 7 FORCE 1 Output of Channel 1 control amplifier to gate of external N-channel MOSFET. 8VCC 12 V Supply. SHDN1 VCC ADM1051/ ADM1051A SHDN2 1 F LEAVE OPEN OR CONNECT TO LOGIC SIGNALS IF SHUTDOWN REQUIRED PHD55N03LT FORCE 2 SENSE 2 100 F 2 100 F VOUT1 FORCE 1 SENSE 1 VIN 3.3V 12V MTD3055VL 100 F 2 100 F VOUT2 VIN 3.3V Figure 1. Test Circuit PIN CONFIGURATION TOP VIEW (Not to Scale) 8 7 6 5 1 2 3 4 FORCE 2 SENSE 2 SHDN2 VCC FORCE 1 SENSE 1 SHDN1 GND ADM1051/ ADM1051A CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADM1051/ADM1051A features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. WARNING! ESD SENSITIVE DEVICE |
Аналогичный номер детали - ADM1051JR |
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Аналогичное описание - ADM1051JR |
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