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ADM1181A датащи(PDF) 7 Page - Analog Devices |
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ADM1181A датащи(HTML) 7 Page - Analog Devices |
7 / 12 page ADM202E/ADM1181A –7– REV. 0 ESD TESTING (IEC1000-4-2) IEC1000-4-2 (previously 801-2) specifies compliance testing using two coupling methods, contact discharge and air-gap discharge. Contact discharge calls for a direct connection to the unit being tested. Air-gap discharge uses a higher test voltage but does not make direct contact with the unit under test. With air discharge, the discharge gun is moved towards the unit un- der test developing an arc across the air gap, hence the term air- gap discharge. This method is influenced by humidity, tempera- ture, barometric pressure, distance and rate of closure of the dis- charge gun. The contact-discharge method while less realistic is more repeatable and is gaining acceptance in preference to the air-gap method. Although very little energy is contained within an ESD pulse, the extremely fast rise time coupled with high voltages can cause failures in unprotected semiconductors. Catastrophic destruc- tion can occur immediately as a result of arcing or heating. Even if catastrophic failure does not occur immediately, the device may suffer from parametric degradation which may result in de- graded performance. The cumulative effects of continuous ex- posure can eventually lead to complete failure. I/O lines are particularly vulnerable to ESD damage. Simply touching or plugging in an I/O cable can result in a static dis- charge which can damage or completely destroy the interface product connected to the I/O port. Traditional ESD test meth- ods such as the MIL-STD-883B method 3015.7 do not fully test a product’s susceptibility to this type of discharge. This test was intended to test a product’s susceptibility to ESD damage during handling. Each pin is tested with respect to all other pins. There are some important differences between the tradi- tional test and the IEC test: a. The IEC test is much more stringent in terms of discharge energy. The peak current injected is over four times greater. b. The current rise time is significantly faster in the IEC test. c. The IEC test is carried out while power is applied to the device. It is possible that the ESD discharge could induce latch-up in the device under test. This test therefore is more representative of a real-world I/O discharge where the equipment is operating normally with power applied. For maximum peace of mind, however, both tests should be performed therefore ensuring maximum protection both during handling and later during field service. R1 R2 C1 DEVICE UNDER TEST HIGH VOLTAGE GENERATOR ESD TEST METHOD R2 C1 H. BODY MIL-STD883B 1.5k Ω 100pF IEC1000-4-2 330 Ω 150pF Figure 12. ESD Test Standards 100 90 36.8 10 tDL tRL TIME t Figure 13. Human Body Model ESD Current Waveform 100 90 10 TIME t 30ns 60ns 0.1 TO 1ns Figure 14. IEC1000-4-2 ESD Current Waveform The ADM202E/ADM1181E products are tested using both the above mentioned test methods. All pins are tested with respect to all other pins as per the MIL-STD-883B specification. In ad- dition all I/O pins are tested as per the IEC test specification. The products were tested under the following conditions: a. Power-On b. Power-Off There are four levels of compliance defined by IEC1000-4-2. The ADM202E/ADM1181A products meet the most stringent compliance level for both contact and for air-gap discharge. This means that the products are able to withstand contact dis- charges in excess of 8 kV and air-gap discharges in excess of 15 kV. |
Аналогичный номер детали - ADM1181A |
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Аналогичное описание - ADM1181A |
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