STB120N4F6 datasheet(4/18 Pages) STMICROELECTRONICS

номер детали	STB120N4F6

подробное описание детали	N-channel 40 V, 3.5 m廓 , 80 A, DPAK, D짼PAK STripFET??VI DeepGATE??Power MOSFET

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Electrical characteristics

STB120N4F6, STD120N4F6

4/18

Doc ID 17042 Rev 5

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

Voltage

ID = 250 µA, VGS= 0

40

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 20 V

VDS = 20 V,Tc = 125 °C

1

10

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 20 V

±

100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2

4

V

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 40 A

3.5

4.0

m

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f=1 MHz,

VGS = 0 V

-

3850

650

350

-

pF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 20 V, ID = 80 A

VGS = 10 V

(see Figure 14)

-

65

20

16

-

nC

RG

Intrinsic gate resistance

f = 1 MHz open drain

-

1.5

-

Ω

Аналогичный номер детали - STB120N4F6

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STB120N4LF6	897Kb / 18P	N-channel 40 V, 3.1 m廓, 80 A DPAK, D짼PAK STripFET??VI DeepGATE??Power MOSFET
VBsemi Electronics Co.,...	STB120N4LF6	1Mb / 9P	N-Channel 40 V (D-S) MOSFET

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Аналогичное описание - STB120N4F6

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STB120N4LF6	897Kb / 18P	N-channel 40 V, 3.1 m廓, 80 A DPAK, D짼PAK STripFET??VI DeepGATE??Power MOSFET
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	STB95N3LLH6	936Kb / 18P	N-channel 30 V, 0.0037 廓 , 80 A, D2PAK, DPAK, IPAK, TO-220 STripFET VI DeepGATE Power MOSFET
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Аналогичный номер детали - STB120N4F6

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