MMBTH10LT1

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

DC Current Gain (IC = 4.0 mAdc, VCE = 10 Vdc)

hFE

60

—

—

—

Collector–Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 0.4 mAdc)

VCE(sat)

—

—

0.5

Vdc

Base–Emitter On Voltage (IC = 4.0 mAdc, VCE = 10 Vdc)

VBE

—

—

0.95

Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain – Bandwidth Product

(IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz)

fT

650

—

—

MHz

Collector–Base Capacitance

(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)

Ccb

—

—

0.7

pF

Common–Base Feedback Capacitance

(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)

Crb

—

—

0.65

pF

Collector Base Time Constant

(IC= 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz)

rb

′Cc

—

—

9.0

ps

TYPICAL CHARACTERISTICS

600

f, FREQUENCY (MHz)

Figure 1. Rectangular Form

gib (mmhos)

Figure 2. Polar Form

f, FREQUENCY (MHz)

Figure 3. Rectangular Form

gfb (mmhos)

Figure 4. Polar Form

70

60

50

10

0

– 10

020

40

60

0

80

100

70

60

50

40

30

20

0

60

30

20

10

10

30

50

70

–10

10

200

300

400

500

700

1000

80

–20

–30

–40

–50

–60

40

30

20

– 20 – 30

50

40

100

200

300

400

500

700

1000

0

–10

–20

–30

30

20

10

40

70

60

50

bfb

–gfb

100

200

400

700

1000 MHz

1000 MHz

100

200

400

700

gib

–bib

yfb, FORWARD TRANSFER ADMITTANCE

COMMON–BASE y PARAMETERS versus FREQUENCY

(VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25°C)

yib, INPUT ADMITTANCE