STB9NK50Z datasheet(3/13 Pages) STMICROELECTRONICS

номер детали	STB9NK50Z

подробное описание детали	N-CHANNEL 500V - 7.2A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH MOSFET

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STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF

DYNAMIC

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%

VDSS.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID =1mA,VGS = 0

500

V

IDSS

Zero Gate Voltage

Drain Current (VGS =0)

VDS =Max Rating

VDS =Max Rating,TC = 125 °C

1

50

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS = ± 20V

±10

µA

VGS(th)

Gate Threshold Voltage

VDS =VGS,ID = 100µA

3

3.75

4.5

V

RDS(on)

Static Drain-source On

Resistance

VGS =10V, ID = 3.6 A

0.72

0.85

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS =15V, ID = 3.6 A

5.3

S

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V,f= 1MHz,VGS = 0

910

125

30

pF

Coss eq. (3)

Equivalent Output

Capacitance

VGS =0V, VDS = 0V to 400V

75

pF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on Delay Time

Rise Time

VDD =250 V, ID =3.6 A

RG =4.7Ω VGS =10 V

(Resistive Load see, Figure 3)

17

20

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD =400V, ID =7.2 A,

VGS =10V

32

6

18

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(off)

tf

Turn-off Delay Time

Fall Time

VDD =250 V, ID =3.6 A

RG =4.7Ω VGS =10 V

(Resistive Load see, Figure 3)

45

22

ns

tr(Voff)

tf

tc

Off-voltage Rise Time

Fall Time

Cross-over Time

VDD =400V, ID =7.2 A,

RG =4.7Ω, VGS = 10V

(Inductive Load see, Figure 5)

15

13

30

ns

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (2)

Source-drain Current

Source-drain Current (pulsed)

7.2

28.8

A

VSD (1)

ForwardOnVoltage

ISD =7.2 A, VGS =0

1.6

V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 7.2 A, di/dt = 100A/µs

VDD =40 V,Tj = 150°C

(see test circuit, Figure 5)

238

1.5

12.6

ns

µC

A

Аналогичный номер детали - STB9NK50Z

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STMicroelectronics	STB9NK50Z	572Kb / 12P	N-CHANNEL 500V - 0.72ohm - 7.2A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH??Power MOSFET June 2002
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STMicroelectronics	STB9NK50ZFP	572Kb / 12P	N-CHANNEL 500V - 0.72ohm - 7.2A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH??Power MOSFET June 2002
STMicroelectronics	STB9NK50ZT4	572Kb / 12P	N-CHANNEL 500V - 0.72ohm - 7.2A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH??Power MOSFET June 2002

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Аналогичное описание - STB9NK50Z

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STP14NK50Z	673Kb / 14P	N-CHANNEL 500V-0.34ohm-14ATO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH?줡ower MOSFET March 2003
	STP14NK50Z	626Kb / 19P	N-channel 500V - 0.34OHM - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESH Power MOSFET
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	STP9NK60Z	581Kb / 13P	N-CHANNEL 600V - 0.85ohm - 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET June 2002
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	STP9NK70Z	664Kb / 14P	N-CHANNEL 700V - 1ohm - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH?줡ower MOSFET April 2002
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