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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BC237C датащи(PDF) 1 Page - Fairchild Semiconductor |
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BC237C датащи(HTML) 1 Page - Fairchild Semiconductor |
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1 / 4 page  ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T a=25°C unless otherwise noted Electrical Characteristics T a=25°C unless otherwise noted hFE Classification Symbol Parameter Value Units VCES Collector-Emitter Voltage : BC237 : BC238/239 50 30 V V VCEO Collector-Emitter Voltage : BC237 : BC238/239 45 25 V V VEBO Emitter-Base Voltage : BC237 : BC238/239 6 5 V V IC Collector Current (DC) 100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage : BC237 : BC238/239 IC=2mA, IB=0 45 25 V V BVEBO Emitter Base Breakdown Voltage : BC237 : BC238/239 IE=1µA, IC=0 6 5 V V ICES Collector Cut-off Current : BC237 : BC238/239 VCE=50V, VBE=0 VCE=30V, VBE=0 0.2 0.2 15 15 nA nA hFE DC Current Gain VCE=5V, IC=2mA 120 800 VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA IC=100mA, IB=5mA 0.07 0.2 0.2 0.6 V V VBE (sat) Collector-Base Saturation Voltage IC=10mA, IB=0.5mA IC=100mA, IB=5mA 0.73 0.87 0.83 1.05 V V VBE (on) Base-Emitter On Voltage VCE=5V, IC=2mA 0.55 0.62 0.7 V fT Current Gain Bandwidth Product VCE=3V, IC=0.5mA, f=100MHz VCE=5V, IC=10mA, f=100MHz 150 85 250 MHz MHz Cob Output Capacitance VCB=10V, IE=0, f=1MHz 3.5 6 pF Cib Input Base Capacitance VEB=0.5V, IC=0, f=1MHz 8 pF NF Noise Figure : BC237/238 : BC239 : BC239 VCE=5V, IC=0.2mA, f=1KHz RG=2KΩ VCE=5V, IC=0.2mA RG=2KΩ, f=30~15KHz 210 4 4 dB dB dB Classification A B C hFE 120 ~ 220 180 ~ 460 380 ~ 800 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 1. Collector 2. Base 3. Emitter TO-92 1 |
Аналогичный номер детали - BC237C |
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Аналогичное описание - BC237C |
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