поискавой системы для электроныых деталей |
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NZT45H8 датащи(PDF) 2 Page - Fairchild Semiconductor |
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NZT45H8 датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 4 page Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage IC = 100 mA, IB = 0 60 V ICBO Collector-Cutoff Current VCB = 60 V, IE = 0 10 µA IEBO Emitter-Cutoff Current VEB = 5.0 V, IC = 0 100 µA ON CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS hFE DC Current Gain IC = 2.0 A, VCE = 1.0 V IC = 4.0 A, VCE = 1.0 V 60 40 VCE(sat) Collector-Emitter Saturation Voltage IC = 8.0 A, IB = 0.4 A 1.0 V VBE(sat) Base-Emitter On Voltage IC = 8.0 A, IB = 0.8 A 1.5 V VBE(on) Base-Emitter On Voltage IC = 10 mA, VCE = 2.0 V 0.54 0.65 V fT Current Gain - Bandwidth Product IC = 500 mA, VCE = 10 V, 40 MHz DC Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current PQ 0.1 1 10 15 0 0.2 0.4 0.6 0.8 1 I - COLLECTOR CURRENT (A) C ββ = 10 125 ºC - 40 ºC 25 °C Typical Pulsed Current Gain vs Collector Current 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 40 60 80 100 120 140 160 180 200 I - COLLECTOR CURRENT (A) C 125 °C 25 °C - 40 °C Vce = 5V PNP Power Amplifier (continued) |
Аналогичный номер детали - NZT45H8 |
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Аналогичное описание - NZT45H8 |
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