STD13NM60N datasheet(5/21 Pages) STMICROELECTRONICS

номер детали	STD13NM60N

подробное описание детали	N-channel 600 V, 0.28 廓 typ., 11 A MDmesh??II Power MOSFET in TO-220FP, I짼PAK, TO-220, IPAK, TO-247 packages

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STF/I/P/U/W13NM60N

Electrical characteristics

Doc ID 15420 Rev 5

5/21

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 300 V, ID = 5.5 A

RG =4.7 Ω VGS = 10 V

(see Figure 19)

-

3

8

30

10

-

ns

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min

Typ. Max.

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

-

11

44

A

VSD

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 11 A, VGS = 0

-

1.5

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 11 A, di/dt = 100 A/µs

VDD = 100 V

(see Figure 21)

-

230

2

18

ns

µC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 11 A, di/dt = 100 A/µs

VDD = 100 V, Tj = 150 °C

(see Figure 21)

-

290

190

17

ns

µC

A

Аналогичный номер детали - STD13NM60N

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STD13NM60N	1Mb / 24P	Low gate input resistance June 2015 Rev 3
Inchange Semiconductor ...	STD13NM60N	300Kb / 2P	Isc N-Channel MOSFET Transistor
STMicroelectronics	STD13NM60ND	1Mb / 21P	N-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK
Inchange Semiconductor ...	STD13NM60ND	323Kb / 2P	isc N-Channel Mosfet Transistor

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Аналогичное описание - STD13NM60N

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STF13NM60N	989Kb / 21P	N-channel 600 V, 0.28 廓 typ., 11 A MDmesh??II Power MOSFET in TO-220FP, I짼PAK, TO-220, IPAK, TO-247 packages
	STP13NM60N	989Kb / 21P	N-channel 600 V, 0.28 ohm typ., 11 A MDmesh II Power MOSFET in TO-220FP, I2PAK, TO-220, IPAK, TO-247 packages
	STD14NM50N	1Mb / 26P	N-channel 500 V, 0.28 廓 typ., 12 A MDmesh??II Power MOSFET in D짼PAK, DPAK, TO-220FP, I짼PAK and TO-220 packages
	STB14NM50N	1Mb / 26P	N-channel 500 V, 0.28 廓 typ., 12 A MDmesh??II Power MOSFET in D짼PAK, DPAK, TO-220FP, I짼PAK and TO-220 packages
	STF13NM60N-H	791Kb / 13P	N-channel 600 V, 0.28 廓, 11 A MDmesh??II Power MOSFET in TO-220FP
	STW16N65M5	1Mb / 20P	N-channel 650 V, 0.230 廓, 12 A MDmesh??V Power MOSFET in TO-220FP, I짼PAK, TO-220, IPAK, TO-247
	STP16N60M2	453Kb / 16P	N-channel 600 V, 0.28 廓 typ., 12 A MDmesh??M2 Power MOSFET in TO-220 and IPAK packages March 2015 Rev 1
	STI18NM60N	998Kb / 18P	N-channel 600 V, 0.27 廓, 13 A MDmesh??II Power MOSFET in TO-220, TO-220FP, TO-247, D짼PAK and I짼PAK
	STP13N60M2	1Mb / 18P	N-channel 600 V, 0.35 廓 typ., 11 A MDmesh II Plus??low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages February 2014 Rev 5
	STP26NM60N	1Mb / 24P	N-channel 600 V, 0.135 廓 typ., 20 A MDmesh??II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages

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