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STP10N62K3 датащи(PDF) 5 Page - STMicroelectronics

номер детали STP10N62K3
подробное описание детали  N-channel 620 V, 0.68typ., 8.4 A SuperMESH3?
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производитель  STMICROELECTRONICS [STMicroelectronics]
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STP10N62K3 датащи(HTML) 5 Page - STMicroelectronics

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STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3
Electrical characteristics
Doc ID 15640 Rev 4
5/17
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 310 V, ID = 4 A,
RG = 4.7 Ω, VGS = 10 V
(see
Figure 17)
-
14.5
15
41
31
-
ns
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
-
8.4
33.6
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 8 A, VGS = 0
-
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A, di/dt = 100A/µs
VDD = 60 V (see Figure 22)
-
320
2
13
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see
Figure 22)
-
410
2.9
14
ns
µC
A
Table 8.
Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
V(BR)GSO Gate-source breakdown
voltage (ID = 0)
Igs= ± 1 mA
30
-
V


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