FAN5236

PRODUCT SPECIFICATION

REV. 1.1.7 4/4/03

7

Typical Applications

Figure 4. DDR Regulator Application

Table 1. DDR Regulator BOM

Note 1: Suitable for typical notebook computer application of 4A continuous, 6A peak for VDDQ. If continuous operation above

6A is required use single SO-8 packages for Q1A (FDS6612A) and Q1B (FDS6690S) respectively. Using FDS6690S,

change R7 to 1200

Ω. Refer to Power MOSFET Selection, page 15 for more information.

Description

Qty

Ref.

Vendor

Part Number

Capacitor 68

µf, Tantalum, 25V, ESR 150mΩ

1

C1

AVX

TPSV686*025#0150

Capacitor 10nf, Ceramic

2

C2, C3

Any

Capacitor 68

µf, Tantalum, 6V, ESR 1.8Ω

1

C4

AVX

TAJB686*006

Capacitor 150nF, Ceramic

2

C5, C7

Any

Capacitor 180

µf, Specialty Polymer 4V, ESR 15mΩ

2

C6A, C6B

Panasonic

EEFUE0G181R

Capacitor 1000

µf, Specialty Polymer 4V, ESR 10mΩ 1

C8

Kemet

T510E108(1)004AS4115

Capacitor 0.1

µF, Ceramic

2

C9

Any

18.2K

Ω, 1% Resistor

3

R1, R2

Any

1.82K

Ω, 1% Resistor

1

R6

Any

56.2K

Ω, 1% Resistor

2

R3

Any

10K

Ω, 5% Resistor

2

R4

Any

3.24K

Ω, 1% Resistor

1

R5

Any

1.5K

Ω, 1% Resistor

2

R7, R8

Any

Schottky Diode 30V

2

D1, D2

Fairchild

BAT54

Inductor 6.4

µH, 6A, 8.64mΩ

1

L1,

Panasonic

ETQ-P6F6R4HFA

Inductor 0.8

µH, 6A, 2.24mΩ

1

L2

Panasonic

ETQ-P6F0R8LFA

Dual MOSFET with Schottky

1

Q1, Q2

Fairchild

FDS6986S (note 1)

DDR Controller

1

U1

Fairchild

FAN5236

FPWM1 (VOUT1)

2

C6A

VDDQ

= 2.5V

DDR

L1

Q1B

5

27

C8A

VTT =

VDDQ/2

L2

24

PWM 1

PWM 2

ILIM1

PG2/REF

14

13

11

16

R5

R6

18

28

VCC

+5

+5

ILIM2/REF2

Q2B

1.25V@10mA

C7

D1

+5

6

4

R7

7

25

R8

23

D2

+5

9

22

C4

19

VSEN2

ISNS2

1

AGND

R3

3

26

PGND2

SW2

HDRV2

ISNS1

PGND2

EN1

8

EN2

21

Q1A

Q2A

20

FPWM2

10

VSEN1

R2

R1

LDRV1

BOOT2

HDRV1

SW1

BOOT1

VIN

LDRV2

C5

C1

PG1

15

+5

R4

C9

VIN (BATTERY)

= 5 to 24V

SS1

12

C2

SS2

17

C3

C6B

C8B