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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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FDC3512 датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDC3512 датащи(HTML) 2 Page - Fairchild Semiconductor |
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2 / 5 page  FDC3512 Rev B2(W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) WDSS Drain-Source Avalanche Energy Single Pulse, VDD = 40 V, ID=3.0 A 90 mJ IAR Drain-Source Avalanche Current 3.0 A Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 80 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 80 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2 2.4 4 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C –6 mV/ °C RDS(on) Static Drain–Source On Resistance VGS = 10 V, ID = 3.0 A VGS = 6.0 V, ID = 2.8 A VGS = 10 V, ID = 3.0 A;TJ = 125 °C 56 61 97 77 88 141 m Ω ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 10 A gFS Forward Transconductance VDS = 10 V, ID = 3.0 A 14 S Dynamic Characteristics Ciss Input Capacitance 634 pF Coss Output Capacitance 58 pF Crss Reverse Transfer Capacitance VDS = 40 V, V GS = 0 V, f = 1.0 MHz 28 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 7 14 ns tr Turn–On Rise Time 3 6 ns td(off) Turn–Off Delay Time 24 28 ns tf Turn–Off Fall Time VDD = 40 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 4 8 ns Qg Total Gate Charge 13 18 nC Qgs Gate–Source Charge 2.4 nC Qgd Gate–Drain Charge VDS = 40 V, ID = 3.0 A, VGS = 10 V 2.8 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 1.3 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) 0.8 1.2 V trr Diode Reverse Recovery Time 28.2 nS Qrr Diode Reverse Recovery Charge IF = 3.0 A, diF/dt = 300 A/µs (Note 2) 48 nC Notes: 1. R θJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θJC is guaranteed by design while RθCA is determined by the user's board design. a. 78°C/W when mounted on a 1in 2 pad of 2oz copper on FR-4 board. b. 156°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% |
Аналогичный номер детали - FDC3512 |
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Аналогичное описание - FDC3512 |
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