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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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FDC6392S датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDC6392S датащи(HTML) 2 Page - Fairchild Semiconductor |
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2 / 6 page  FDC6392S Rev C(W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –20 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C –16 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –0.6 –1.0 –1.5 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C 3 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = –4.5 V, ID = –2.2 A VGS = –2.5 V, ID = –1.8 A VGS=–4.5 V, ID =–2.2 A, TJ=125 °C 101 152 132 150 200 211 m Ω ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V –6 A gFS Forward Transconductance VDS = –5 V, ID = –2.2 A 6 S Dynamic Characteristics Ciss Input Capacitance 369 pF Coss Output Capacitance 80 pF Crss Reverse Transfer Capacitance VDS = –10 V, V GS = 0 V, f = 1.0 MHz 39 pF RG Gate Resistance VGS = –15 mV, f = 1.0 MHz 7.6 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time 8 16 ns tr Turn–On Rise Time 11 20 ns td(off) Turn–Off Delay Time 13 23 ns tf Turn–Off Fall Time VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω 4 8 ns Qg Total Gate Charge 3.7 5.2 nC Qgs Gate–Source Charge 1 nC Qgd Gate–Drain Charge VDS = –10 V, ID = –2.2 A, VGS = –4.5 V 1 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –0.8 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –0.8 A(Note 2) –0.8 –1.2 V trr Diode Reverse Recovery Time 5.4 nS Qrr Diode Reverse Recovery Charge IF = –2.2 A, diF/dt = 100 A/µs 1.2 nC Schottky Diode Characteristics IR Reverse Leakage VR = 20 V TJ = 25 °C 148 400 µA TJ = 100 °C 14 20 mA VR = 10V TJ = 25 °C 55 200 µA TJ = 100 °C 5.2 10 mA VF Forward Voltage IF = 500mA TJ = 25 °C 0.34 0.4 V TJ = 100 °C 0.26 0.35 IF = 1 A TJ = 25 °C 0.40 0.45 V TJ = 100 °C 0.35 0.42 |
Аналогичный номер детали - FDC6392S |
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Аналогичное описание - FDC6392S |
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