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2N5064RLRAG датащи(PDF) 2 Page - ON Semiconductor

номер детали 2N5064RLRAG
подробное описание детали  Sensitive Gate Silicon Controlled Rectifiers
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
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2N5064RLRAG датащи(HTML) 2 Page - ON Semiconductor

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2N5060 Series
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2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
*Thermal Resistance, Junction−to−Case (Note 2)
RqJC
75
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
2. This measurement is made with the case mounted “flat side down” on a heatsink and held in position by means of a metal clamp over the
curved surface.
*Indicates JEDEC Registered Data.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current (Note 3)
(VAK = Rated VDRM or VRRM)TC = 25°C
TC = 110°C
IDRM, IRRM
10
50
mA
mA
ON CHARACTERISTICS
*Peak Forward On−State Voltage (Note 4)
(ITM = 1.2 A peak @ TA = 25°C)
VTM
1.7
V
Gate Trigger Current (Continuous DC) (Note 5)
*(VAK = 7.0 Vdc, RL = 100 W)TC = 25°C
TC = −40°C
IGT
200
350
mA
Gate Trigger Voltage (Continuous DC) (Note 5)
TC = 25°C
*(VAK = 7.0 Vdc, RL = 100 W)TC = −40°C
VGT
0.8
1.2
V
*Gate Non−Trigger Voltage
(VAK = Rated VDRM, RL = 100 W)TC = 110°C
VGD
0.1
V
Holding Current (Note 3)
TC = 25°C
*(VAK = 7.0 Vdc, initiating current = 20 mA)
TC = −40°C
IH
5.0
10
mA
Turn-On Time
Delay Time
Rise Time
(IGT = 1.0 mA, VD = Rated VDRM,
Forward Current = 1.0 A, di/dt = 6.0 A/ms
td
tr
3.0
0.2
ms
Turn-Off Time
(Forward Current = 1.0 A pulse,
Pulse Width = 50 ms,
0.1% Duty Cycle, di/dt = 6.0 A/ms,
dv/dt = 20 V/ms, IGT = 1 mA)
2N5060, 2N5061
2N5062, 2N5064
tq
10
30
ms
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(Rated VDRM, Exponential, RGK = 1 kW)
dv/dt
30
V/ms
*Indicates JEDEC Registered Data.
3. RGK = 1000 W is included in measurement.
4. Forward current applied for 1 ms maximum duration, duty cycle p 1%.
5. RGK current is not included in measurement.


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