FDG330P datasheet(3/5 Pages) FAIRCHILD

номер детали	FDG330P

подробное описание детали	P-Channel 1.8V Specified PowerTrench MOSFET

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FDG330P Rev D (W)

Typical Characteristics

0

1.5

3

4.5

6

00.5

11.5

2

2.5

-VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS=-4.5V

-3.0V

-1.5V

-2.0V

-2.5V

-1.8V

0.6

1

1.4

1.8

2.2

2.6

3

01.5

34.5

6

-ID, DRAIN CURRENT (A)

VGS=-1.5V

-3.0V

-4.5V

-2.0V

-2.5V

-1.8V

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.7

0.8

0.9

1

1.1

1.2

1.3

1.4

-50

-25

0

25

50

75

100

125

150

TJ, JUNCTION TEMPERATURE (

oC)

ID = -2.0A

VGS = -4.5V

0.05

0.1

0.15

0.2

0.25

0.3

1

2345

-VGS, GATE TO SOURCE VOLTAGE (V)

ID = -1A

TA = 125

oC

TA = 25

oC

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

0

1.5

3

4.5

6

0.5

1

1.5

2

-VGS, GATE TO SOURCE VOLTAGE (V)

TA = -55

oC

25oC

125oC

VDS = -5V

0.0001

0.001

0.01

0.1

1

10

0

0.2

0.4

0.6

0.8

1

1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

VGS = 0V

TA = 125

oC

25oC

-55oC

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

Аналогичный номер детали - FDG330P

производитель	номер детали	датащи	подробное описание детали
Fairchild Semiconductor	FDG332PZ	458Kb / 6P	P-Channel PowerTrench짰 MOSFET -20V, -2.6A, 97m廓

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