Typical Characteristics

Small Signal Diode

(continued)

Symbol

Parameter

Test Conditions

Min

Max

Units

V

R

Breakdown Voltage

I

I

100

75

V

V

V

F

Forward Voltage

1N914B/4448

1N916B

1N914/916/4148

1N914A/916A

1N916B

1N914B/4448

I

I

I

I

I

I

620

630

720

730

1.0

1.0

1.0

1.0

mV

mV

V

V

V

V

I

R

Reverse Current

V

V

V

25

50

5.0

nA

µA

µA

C

T

Total Capacitance

1N916A/B/4448

1N914A/B/4148

V

= 1.0 MHz

V

= 1.0 MHz

2.0

4.0

pF

pF

t

rr

Reverse Recovery Time

I

I

4.0

ns

110

120

130

140

150

160

Ta=25

o

C

1

2

3

5

10

20

30

50

100

Reverse Current, I

Figure 1. Reverse Voltage vs Reverse Current

BV - 1.0 to 100 uA

0

20

40

60

80

100

120

10

20

30

50

70

100

T a= 25

o

C

R everse V oltage, V

Figure 2. Reverse Current vs Reverse Voltage

IR - 10 to 100 V

GENERAL RULE: The Reverse Current of a diode will approximately

double for every ten (10) Degree C increase in Temperature

250

300

350

400

450

500

550

1

2

3

5

10

20

30

50

100

Ta= 25

o

C

Forward Current, I

F

[uA]

Figure 3. Forward Voltage vs Forward Current

VF - 1 to 100 uA

450

500

550

600

650

700

750

0.1

0.2

0.3

0.5

1

2

3

5

10

Ta= 25

o

C

Forward Current, I

Figure 4. Forward Voltage vs Forward Current

VF - 0.1 to 10 mA