FDS6576 datasheet(1/8 Pages) FAIRCHILD

номер детали	FDS6576

подробное описание детали	P-Channel 2.5V Specified PowerTrenchTM MOSFET

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FDS6576 Rev. B

FDS6576

P-Channel 2.5V Specified PowerTrenchTM MOSFET

General Description

This P-Channel 2.5V specified MOSFET is in a rugged

gate version of Fairchild Semiconductor's advanced

PowerTrench process. It has been optimized for power

management applications with a wide range of gate

drive voltage (2.5V - 12V).

Applications

Load switch

Battery protection

Power management

November 1999

PRELIMINARY

Features

-11 A, -20 V. R

DS(ON) = 0.014 Ω @ VGS = -4.5 V

R

DS(ON) = 0.020 Ω @ VGS = -2.5 V

Extended V

GSS range (±12V) for battery applications.

Low gate charge (44nC typical).

Fast switching speed.

High performance trench technology for extremely

low R

DS(ON).

High power and current handling capability.

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Аналогичный номер детали - FDS6576

производитель	номер детали	датащи	подробное описание детали
Fairchild Semiconductor	FDS6576	451Kb / 5P	P-Channel 2.5V Specified PowerTrench MOSFET
Fairchild Semiconductor	FDS6576	451Kb / 5P	P-Channel 2.5V Specified PowerTrench MOSFET

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Аналогичное описание - FDS6576

производитель	номер детали	датащи	подробное описание детали
Fairchild Semiconductor	FDC640P	261Kb / 8P	P-Channel 2.5V Specified PowerTrenchTM MOSFET
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