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FDZ206P датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDZ206P датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page February 2006 ©2006 Fairchild Semiconductor Corporation FDZ206P Rev. E (W) FDZ206P P-Channel 2.5V Specified PowerTrench® ® ® ® BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ206P minimizes both PCB space and rDS(on). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra- low profile packaging, low gate charge, and low rDS(on). Applications • Battery management • Load switch • Battery protection Features • –13 A, –20 V. rDS(on) = 9.5 mΩ @ VGS = –4.5 V rDS(on) = 14.5 mΩ @ VGS = –2.5 V • Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 • Ultra-thin package: less than 0.80 mm height when mounted to PCB • 0.65 mm ball pitch • 3.5 x 4 mm2 footprint • High power and current handling capability Gate Bottom Index slot Top S G D Absolute Maximum Ratings T A=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGS Gate-Source Voltage ±12 V ID Drain Current – Continuous (Note 1a) –13 A – Pulsed –60 PD Power Dissipation (Steady State) (Note 1a) 2.2 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 56 °C/W RθJB Thermal Resistance, Junction-to-Ball (Note 1) 4.5 RθJC Thermal Resistance, Junction-to-Case (Note 1) 0.6 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 206P FDZ206P 13” 12mm 4000 |
Аналогичный номер детали - FDZ206P |
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Аналогичное описание - FDZ206P |
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