February 2006

©2006 Fairchild Semiconductor Corporation

FDZ206P Rev. E (W)

FDZ206P

P-Channel 2.5V Specified PowerTrench®

®

®

® BGA MOSFET

General Description

Combining

Fairchild’s

advanced

2.5V

specified

PowerTrench process with state of the art BGA

packaging, the FDZ206P minimizes both PCB space

This BGA MOSFET embodies a

breakthrough in packaging technology which enables

the device to combine excellent thermal transfer

characteristics, high current handling capability, ultra-

Applications

• Battery management

• Load switch

• Battery protection

Features

Only 42% of the area of SO-8

• Ultra-thin package: less than 0.80 mm height when

mounted to PCB

• 0.65 mm ball pitch

• High power and current handling capability

Gate

Bottom

Index

slot

Top

S

G

D

Symbol

Parameter

Ratings

Units

Drain-Source Voltage

–20

V

Gate-Source Voltage

±12

V

Drain Current – Continuous

(Note 1a)

–13

A

– Pulsed

–60

Power Dissipation (Steady State)

(Note 1a)

2.2

W

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

56

°C/W

Thermal Resistance, Junction-to-Ball

(Note 1)

4.5

Thermal Resistance, Junction-to-Case

(Note 1)

0.6

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

206P

FDZ206P

13”

12mm

4000