STL160N3LLH6 datasheet(3/16 Pages) STMICROELECTRONICS

номер детали	STL160N3LLH6

подробное описание детали	N-channel 30 V, 0.0011 廓, 35 A PowerFLAT??5x6 STripFET??VI DeepGATE??Power MOSFET

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STL160N3LLH6

Electrical ratings

Doc ID 18223 Rev 2

3/16

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

30

V

VGS

Gate-source voltage

± 20

V

ID

(1)

1.

The value is rated according to Rthj-c .

Drain current (continuous) at TC = 25 °C

160

A

ID

(1)

Drain current (continuous) at TC = 100 °C

100

A

ID

(2)

2.

The value is rated according to Rthj-pcb.

Drain current (continuous) at Tpcb = 25 °C

35

A

ID

(2)

Drain current (continuous) at Tpcb=100 °C

21.8

A

IDM

(3)

3.

Pulse width limited by safe operating area.

Drain current (pulsed)

140

A

PTOT

(1)

Total dissipation at TC = 25 °C

80

W

PTOT

(3)

Total dissipation at Tpcb = 25 °C

4

W

Derating factor

0.03

W/°C

Tj

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case (drain, steady state)

1.56

°C/W

Rthj-pcb

(1)

1.

When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec.

Thermal resistance junction-ambient

31.3

°C/W

Table 4.

Avalanche data

Symbol

Parameter

Value

Unit

IAV

Not-repetitive avalanche current,

(pulse width limited by Tj max)

35

A

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAV )

900

mJ

Аналогичный номер детали - STL160N3LLH6

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Аналогичное описание - STL160N3LLH6

производитель	номер детали	датащи	подробное описание детали
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Аналогичный номер детали - STL160N3LLH6

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