PZT2907AT3 datasheet(2/4 Pages) ONSEMI

номер детали	PZT2907AT3

подробное описание детали	PNP Silicon Epitaxial Transistor

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производитель	ONSEMI [ON Semiconductor]

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PZT2907AT1, SPZT2907AT1G

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ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Base Breakdown Voltage

(IC = −10 mAdc, IE = 0)

V(BR)CBO

−60

−

Vdc

Collector−Emitter Breakdown Voltage

(IC = 10 mAdc, IB = 0)

V(BR)CEO

−60

−

Vdc

Emitter−Base Breakdown Voltage

(IE = −10 mAdc, IC = 0)

V(BR)EBO

−5.0

−

Vdc

Collector−Base Cutoff Current

(VCB = −50 Vdc, IE = 0)

ICBO

−

−10

nAdc

Collector−Emitter Cutoff Current

(VCE = −30 Vdc, VBE = 0.5 Vdc)

ICEX

−

−50

nAdc

Base−Emitter Cutoff Current

(VCE = −30 Vdc, VBE = −0.5 Vdc)

IBEX

−

−50

nAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = −0.1 mAdc, VCE = −10 Vdc)

(IC = −1.0 mAdc, VCE = −10 Vdc)

(IC = −10 mAdc, VCE = −10 Vdc)

(IC = −150 mAdc, VCE = −10 Vdc)

(IC = −500 mAdc, VCE = −10 Vdc)

hFE

75

100

50

−

300

−

Collector-Emitter Saturation Voltages

(IC = −150 mAdc, IB = −15 mAdc)

(IC = − 500 mAdc, IB = −50 mAdc)

VCE(sat)

−

−0.4

−1.6

Vdc

Base-Emitter Saturation Voltages

(IC = −150 mAdc, IB = −15 mAdc)

(IC = −500 mAdc, IB = −50 mAdc)

VBE(sat)

−

−1.3

−2.6

Vdc

DYNAMIC CHARACTERISTICS

Current-Gain − Bandwidth Product

(IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz)

fT

200

−

MHz

Output Capacitance

(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)

Cc

−

8.0

pF

Input Capacitance

(VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz)

Ce

−

30

pF

SWITCHING TIMES

Turn-On Time

(VCC = −30 Vdc, IC = −150 mAdc,

IB1 = −15 mAdc)

ton

−

45

ns

Delay Time

td

−

10

Rise Time

tr

−

40

Turn-Off Time

(VCC = −6.0 Vdc, IC = −150 mAdc,

IB1 = IB2 = −15 mAdc)

toff

−

100

ns

Storage Time

ts

−

80

Fall Time

tf

−

30

2. Pulse Test: Pulse Width  300 ms, Duty Cycle  2.0%.

Аналогичный номер детали - PZT2907AT3

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	PZT2907AT3G	108Kb / 4P	PNP Silicon Epitaxial Transistor August, 2013 ??Rev. 10

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