STL10DN15F3 datasheet(4/14 Pages) STMICROELECTRONICS

номер детали	STL10DN15F3

подробное описание детали	N-channel 150 V, 0.20 Ohm typ., 2.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 double island package

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Electrical characteristics

STL10DN15F3

4/14

Doc ID 023781 Rev 1

2

Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS= 0

150

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 150 V,

VDS = 150 V, Tc=125 °C

1

10

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

±

100

nA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

24

V

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 1.4 A

0.20

0.22

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f=1 MHz,

VGS=0

-

330

60

15

-

pF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=75 V, ID = 2.8 A

VGS =10 V

(see Figure 14)

-

9.5

1.5

4.3

-

nC

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD=75 V, ID= 1.4 A,

RG= 4.7 Ω, VGS=10 V

(see Figure 13)

-

5.5

2.4

16.1

5.5

-

ns

Аналогичный номер детали - STL10DN15F3

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Аналогичное описание - STL10DN15F3

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