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STP10N65K3 датащи(PDF) 5 Page - STMicroelectronics |
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STP10N65K3 датащи(HTML) 5 Page - STMicroelectronics |
5 / 17 page STF10N65K3, STFI10N65K3, STP10N65K3 Electrical characteristics Doc ID 15732 Rev 3 5/17 The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device’s ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 310 V, ID = 3.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) - 14.5 14 44 35 - ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) - 7.2 28.8 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 7 A, VGS = 0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 7 A, di/dt = 100A/µs VDD = 60 V (see Figure 22) - 320 2 13 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 7 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 22) - 410 2.9 14 ns µC A Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)GSO Gate-source breakdown voltage Igs=± 1 mA, ID=0 30 - - V |
Аналогичный номер детали - STP10N65K3 |
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Аналогичное описание - STP10N65K3 |
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