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STP6N120K3 датащи(PDF) 4 Page - STMicroelectronics

номер детали STP6N120K3
подробное описание детали  N-channel 1200 V, 1.95 Ohm typ., 6 A SuperMESH3 Power MOSFET in TO-3PF, TO-220 and TO-247 packages
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производитель  STMICROELECTRONICS [STMicroelectronics]
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STP6N120K3 датащи(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STFW6N120K3, STP6N120K3, STW6N120K3
4/17
Doc ID 15572 Rev 3
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4.
On / off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
1200
-
-
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 1200 V
VDS = 1200 V, TJ = 125 °C
--
1
50
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
-
-
± 10
µA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 100 µA
3
4
5
V
RDS(on)
Static drain-source on-
resistance
VGS = 10 V, ID = 2.5 A
-
1.95
2.4
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
-
1050
90
1
-
pF
pF
pF
Co(tr)
(1)
1.
Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as
Coss when VDS increases from 0 to 80% VDSS.
Equivalent
capacitance time
related
VGS = 0, VDS = 0 to 960 V
-
40
-
pF
Co(er)
(2)
2.
Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS.
Equivalent
capacitance energy
related
VGS = 0, VDS = 0 to 960 V
-
25
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
3
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 960 V, ID = 7.2 A,
VGS = 10 V
(see Figure 20)
-
39
7.7
23.5
-
nC
nC
nC


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