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STP6N120K3 датащи(PDF) 4 Page - STMicroelectronics |
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STP6N120K3 датащи(HTML) 4 Page - STMicroelectronics |
4 / 17 page Electrical characteristics STFW6N120K3, STP6N120K3, STW6N120K3 4/17 Doc ID 15572 Rev 3 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. On / off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 1200 - - V IDSS Zero gate voltage drain current (VGS = 0) VDS = 1200 V VDS = 1200 V, TJ = 125 °C -- 1 50 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V - - ± 10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 4 5 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 2.5 A - 1.95 2.4 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 100 V, f = 1 MHz, VGS = 0 - 1050 90 1 - pF pF pF Co(tr) (1) 1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Equivalent capacitance time related VGS = 0, VDS = 0 to 960 V - 40 - pF Co(er) (2) 2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS. Equivalent capacitance energy related VGS = 0, VDS = 0 to 960 V - 25 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 3 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 960 V, ID = 7.2 A, VGS = 10 V (see Figure 20) - 39 7.7 23.5 - nC nC nC |
Аналогичный номер детали - STP6N120K3 |
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Аналогичное описание - STP6N120K3 |
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