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FMBA56 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FMBA56 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page PNP Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Symbol Parameter Value Units VCES Collector-Emitter Voltage 80 V VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current - Continuous 500 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Discrete POWER & Signal Technologies © 1998 Fairchild Semiconductor Corporation FMBA56 Absolute Maximum Ratings* T A = 25°C unless otherwise noted Thermal Characteristics T A = 25°C unless otherwise noted Symbol Characteristic Max Units FMBA56 PD Total Device Dissipation Derate above 25 °C 700 5.6 mW mW/ °C RθJA Thermal Resistance, Junction to Ambient 180 °C/W SuperSOT ™-6 Mark: .2G C1 E1 C2 B1 E2 B2 pin #1 |
Аналогичный номер детали - FMBA56 |
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Аналогичное описание - FMBA56 |
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