BC847AE6327 datasheet(3/13 Pages) INFINEON

номер детали	BC847AE6327

подробное описание детали	For AF input stages and driver applications

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производитель	INFINEON [Infineon Technologies AG]

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3 / 13 page

2011-09-09

3

BC847...-BC850...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0 , BC847..., BC850...

IC = 10 mA, IB = 0 , BC848..., BC849...

V(BR)CEO

45

30

-

V

Collector-base breakdown voltage

IC = 10 µA, IE = 0 , BC847..., BC850...

IC = 10 µA, IE = 0 , BC848..., BC849...

V(BR)CBO

50

30

-

Emitter-base breakdown voltage

IE = 0 , IC = 10 µA

V(BR)EBO

-

6

-

Collector-base cutoff current

VCB = 45 V, IE = 0

VCB = 30 V, IE = 0 , TA = 150 °C

ICBO

-

0.015

5

-

µA

DC current gain1)

IC = 10 µA, VCE = 5 V, hFE-grp.A

IC = 10 µA, VCE = 5 V, hFE-grp.B

IC = 10 µA, VCE = 5 V, hFE-grp.C

IC = 2 mA, VCE = 5 V, hFE-grp.A

IC = 2 mA, VCE = 5 V, hFE-grp.B

IC = 2 mA, VCE = 5 V, hFE-grp.C

hFE

-

110

200

420

140

250

480

180

290

520

-

220

450

800

-

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VCEsat

-

90

200

250

600

mV

Base emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VBEsat

-

700

900

-

Base-emitter voltage1)

IC = 2 mA, VCE = 5 V

IC = 10 mA, VCE = 5 V

VBE(ON)

580

-

660

-

700

770

1Pulse test: t < 300µs; D < 2%

Аналогичный номер детали - BC847AE6327

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	BC847A	160Kb / 6P	General Purpose Transistors(NPN Silicon) June, 2004 ??Rev. 6
Continental Device Indi...	BC847A	449Kb / 5P	NPN SILICON PLANAR EPITAXIAL TRANSISTORS
E-Tech Electronics LTD	BC847A	194Kb / 4P	General Purpose Transistors
Micro Commercial Compon...	BC847A	468Kb / 4P	NPN Plastic-Encapsulate Transistors
Shenzhen Ping Sheng Ele...	BC847A	210Kb / 4P	NPN general purpose Transistor

More results

Аналогичное описание - BC847AE6327

производитель	номер детали	датащи	подробное описание детали
Infineon Technologies A...	BC847B-E6327	881Kb / 13P	For AF input stages and driver applications 2011-09-09
Siemens Semiconductor G...	BC846-BC850	273Kb / 8P	NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)
	BCW61	271Kb / 9P	PNP Silicon AF Transistors (For AF input stages and driver applications High current gain)
	BCW60	282Kb / 9P	NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)
Infineon Technologies A...	BCX54	526Kb / 8P	For AF driver and output stages 2011-09-19
Shanghai Leiditech Elec...	BCP54	1,000Kb / 4P	For AF driver and output stages
Infineon Technologies A...	BCX51	526Kb / 8P	For AF driver and output stages 2011-07-29
First Silicon Co., Ltd	BCP55	533Kb / 5P	For AF driver and output stages
Infineon Technologies A...	BCP56-16E6327	827Kb / 7P	For AF driver and output stages 2011-10-13
Siemens Semiconductor G...	BC846S	40Kb / 6P	NPN Silicon AF Transistor Array (For AF input stages and driver applications High current gain)

More results

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