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BCW68FR-7T датащи(PDF) 2 Page - Diodes Incorporated |
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BCW68FR-7T датащи(HTML) 2 Page - Diodes Incorporated |
2 / 2 page SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 - JUNE 1996 PARTMARKING DETAILS BCW67A DA BCW67AR 4W BCW67B DB BCW67BR 5W BCW67C DC BCW67CR 6W BCW68F DF BCW68FR 7T BCW68G DG BCW68GR 5T BCW68H DH BCW68HR 7N COMPLEMENTARY TYPES BCW67 BCW65 BCW68 BCW66 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BCW67 BCW68 UNIT Collector-Emitter Voltage VCES -45 -60 V Collector-Emitter Voltage VCEO -32 -45 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current(10ms) ICM -1000 mA Continuous Collector Current IC -800 mA Base Current IB -100 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C BCW67 BCW68 ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Emitter Breakdown Voltage BCW67 BCW68 V(BR)CEO -32 -45 VICEO=-10mA ICEO=-10mA BCW67 BCW68 V(BR)CES -45 -60 IC=-10µA IC=-10µA Emitter-Base Breakdown Voltage V(BR)EBO -5 V IEBO=-10µA Collector-Emitter Cut-off Current BCW67 BCW68 ICES -20 -10 -20 -10 nA µ A nA µ A VCES=-32V VCES=-32V ,Tamb=150°C VCES=-45V VCES=-45V, Tamb=150°C Emitter-Base Cut-Off Current IEBO -20 nA VEBO=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.7 -0.3 V V IC=-100mA, IB=-10mA IC=-500mA, IB=-50mA* Base-Emitter Saturation Voltage VBE(sat) -2 V IC=-500mA, IB=-50mA* Static Forward Current Transfer BCW67A BCW68F hFE 75 100 35 170 250 IC=-10mA, VCE=-1V IC=-100mA, VCE=-1V* IC=-500mA, VCE=-2V* BCW67B BCW68G hFE 120 160 60 250 400 IC=-10mA, VCE=-1V IC=-100mA, VCE=-1V* IC=-500mA, VCE=-2V* BCW67C BCW68H hFE 180 250 100 350 630 IC=-10mA, VCE=-1V IC=-100mA, VCE=-1V* IC=-500mA, VCE=-2V* Transition Frequency fT 100 MHz IC =-20mA, VCE=-10V f = 100MHz Collector-Base Capacitance Ccbo 12 18 pF VCBO =-10V, f =1MHz Emitter-Base Capacitance Cebo 80 pF VEBO=-0.5V, f =1MHz Noise Figure N 2 10 dB IC= -0.2mA, VCE=- 5V RG =1KΩ, f=1KH ∆ f=200Hz Switching times: Turn-On Time Turn-Off Time ton toff 100 400 ns ns IC=-150mA IB1=- IB2=-15mA RL=150Ω Spice parameter data is available upon request for this device *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% C B E SOT23 BCW67 BCW68 3 - 29 3 - 30 PART OBSOLETE - USE BCW68H |
Аналогичный номер детали - BCW68FR-7T |
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Аналогичное описание - BCW68FR-7T |
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