SI7116DN-T1-E3 datasheet(1/12 Pages) VISHAY

номер детали	SI7116DN-T1-E3

подробное описание детали	N-Channel 40-V (D-S) Fast Switching MOSFET

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Vishay Siliconix

Si7116DN

Document Number: 73139

S-80581-Rev. D, 17-Mar-08

www.vishay.com

1

N-Channel 40-V (D-S) Fast Switching MOSFET

FEATURES

•

Halogen-free Option Available

•

TrenchFET® Power MOSFET

•

New Low Thermal Resistance PowerPAK®

Package with Low 1.07 mm Profile

•

PWM Optimized

•

100 % Rg Tested

APPLICATIONS

•

Synchronous Rectification

•

Intermediate Switch

•

Synchronous Buck

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

Qg (Typ.)

40

0.0078 at VGS = 10 V

16.4

15 nC

0.010 at VGS = 4.5 V

14.5

1

2

3

4

5

6

7

8

S

G

D

3.30 mm

PowerPAK 1212-8

Bottom View

Ordering Information: Si7116DN-T1-E3 (Lead (Pb)-free)

Si7116DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G

D

S

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

Drain-Source Voltage

VDS

40

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

a

TA = 25 °C

ID

16.4

10.5

A

TA = 70 °C

13.1

8.4

Pulsed Drain Current

IDM

60

Continuous Source Current (Diode Conduction)a

IS

3.2

1.3

Avalanche Current

L = 0 1 mH

IAS

15

Avalanche Energy

EAS

11

mJ

Maximum Power Dissipationa

TA = 25 °C

PD

3.8

1.5

W

TA = 70 °C

2.0

0.8

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)b, c

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

≤ 10 s

RthJA

24

33

°C/W

Steady State

65

81

Maximum Junction-to-Case (Drain)

Steady State

RthJC

1.9

2.4

RoHS

COMPLIANT

Аналогичный номер детали - SI7116DN-T1-E3

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI7116DN	78Kb / 5P	N-Channel 40-V (D-S) Fast Switching MOSFET Rev. C, 01-Aug-05
Vishay Siliconix	SI7116DN	533Kb / 12P	N-Channel 40-V (D-S) Fast Switching MOSFET 01-Jan-2022

More results

Аналогичное описание - SI7116DN-T1-E3

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SISH116DN	189Kb / 8P	N-Channel 40 V (D-S) Fast Switching MOSFET 01-Jan-2022
	SI7116DN	78Kb / 5P	N-Channel 40-V (D-S) Fast Switching MOSFET Rev. C, 01-Aug-05
	SI7476DP	65Kb / 5P	N-Channel 40-V (D-S) Fast Switching MOSFET Rev. B, 29-Mar-04
	SI7116DN	533Kb / 12P	N-Channel 40-V (D-S) Fast Switching MOSFET 01-Jan-2022
	SI7840DP	51Kb / 4P	N-Channel 30-V (D-S) Fast Switching MOSFET Rev. C, 25-Feb-02
	SI7458DP	51Kb / 4P	N-Channel 20-V (D-S) Fast Switching MOSFET Rev. A, 04-Mar-02
	SI7840BDP	220Kb / 3P	N-Channel 30-V (D-S) Fast Switching MOSFET 04-Dec-04
	SI7112DN	554Kb / 12P	N-Channel 30 V (D-S) Fast Switching MOSFET Rev. G, 02-May-11

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Аналогичный номер детали - SI7116DN-T1-E3

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