FQPF17N08 datasheet(3/8 Pages) FAIRCHILD

номер детали	FQPF17N08

подробное описание детали	80V N-Channel MOSFET

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Rev. A1, January 2001

0.2

0.4

0.6

0.8

1.0

1.2

1.4

10

-1

10

0

10

1

25℃

175℃

※ Notes :

1. V

GS = 0V

2. 250μs Pulse Test

V

SD , Source-Drain Voltage [V]

2468

10

-1

10

0

10

1

※ Notes :

1. V

DS = 30V

2. 250μs Pulse Test

-55℃

175℃

25℃

V

GS

, Gate-Source Voltage [V]

10

-1

10

0

10

1

10

0

10

1

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom : 4.5 V

※ Note :

1. 250μs Pulse Test

2. T

C = 25

℃

V

DS, Drain-Source Voltage [V]

0

10

203040

50

0.0

0.1

0.2

0.3

0.4

V

GS = 20V

V

GS = 10V

※ Note : T

J = 25

℃

I

D, Drain Current [A]

024

68

10

12

0

2

4

6

8

10

12

V

DS = 40V

V

DS = 64V

※ Note : I

D = 16.5A

Q

G, Total Gate Charge [nC]

10

-1

10

0

10

1

0

150

300

450

600

750

900

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

※ Notes :

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

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