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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRFB812PBF датащи(PDF) 2 Page - International Rectifier |
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IRFB812PBF датащи(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRFB812PbF 2 www.irf.com Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) Starting TJ = 25°C, L = 93mH, RG = 25Ω, IAS = 1.8A. (See Figure 13). ISD = 3.6A, di/dt ≤ 520A/μs, VDDV(BR)DSS, TJ ≤ 150°C. Notes: Pulse width ≤ 300μs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff.(ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80% VDSS. Rθ is measured at TJ approximately 90°C Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– V ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.37 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 1.75 2.2 Ω VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V IDSS Drain-to-Source Leakage Current ––– ––– 25 μA ––– ––– 2.0 mA IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 7.6 ––– ––– S Qg Total Gate Charge ––– ––– 20 Qgs Gate-to-Source Charge ––– ––– 7.3 nC Qgd Gate-to-Drain ("Miller") Charge ––– ––– 7.1 td(on) Turn-On Delay Time ––– 14 ––– tr Rise Time –––22––– ns td(off) Turn-Off Delay Time ––– 24 ––– tf Fall Time –––17––– Ciss Input Capacitance ––– 810 ––– Coss Output Capacitance ––– 47 ––– Crss Reverse Transfer Capacitance ––– 7.3 ––– Coss Output Capacitance ––– 610 ––– pF VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 16 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 5.9 ––– Coss eff. (ER) Effective Output Capacitance ––– 37 ––– (Energy Related) Avalanche Characteristics Symbol Parameter Typ. Units EAS Single Pulse Avalanche Energy d ––– mJ IAR Avalanche Current à ––– A EAR Repetitive Avalanche Energy ––– mJ Thermal Resistance Symbol Parameter Typ. Units RθJC Junction-to-Case h ––– RθCS Case-to-Sink, Flat, Greased Surface 0.5 °C/W RθJA Junction-to-Ambient h ––– VDS = VGS, ID = 250μA VDS = 500V, VGS = 0V VDS = 400V, VGS = 0V, TJ = 125°C Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 250μA VGS = 10V, ID = 2.2A f VGS = 20V Conditions VDS = 50V, ID = 2.2A VGS = -20V ID = 3.6A VDS = 400V VGS = 10V, See Fig.14a &14b f VDD = 250V ID = 3.6A RG = 17 Ω VGS = 10V, See Fig. 15a & 15b f VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 1.8 7.8 Max. 150 VGS = 0V,VDS = 0V to 400V g 62 Max. 1.6 ––– |
Аналогичный номер детали - IRFB812PBF |
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