поискавой системы для электроныых деталей |
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FDD86250 датащи(PDF) 4 Page - Fairchild Semiconductor |
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FDD86250 датащи(HTML) 4 Page - Fairchild Semiconductor |
4 / 6 page ©2010 Fairchild Semiconductor Corporation FDD86250 Rev.C1 www.fairchildsemi.com 4 Figure 7. 0 5 10 15 20 25 0 2 4 6 8 10 ID = 8 A VDD = 50 V VDD = 100 V Qg, GATE CHARGE (nC) VDD = 75 V Gate Charge Characteristics Figure8. 0.1 1 10 100 1 10 100 1000 4000 f = 1 MHz VGS = 0 V VDS, DRAIN TO SOURCE VOLTAGE (V) Crss Coss Ciss CapacitancevsDrain to Source Voltage Figure9. 0.001 0.01 0.1 1 10 40 1 10 100 TJ = 100 oC TJ = 25 oC TJ = 125 oC t AV, TIME IN AVALANCHE (ms) UnclampedInductive Switching Capability Figure 10. 25 50 75 100 125 150 0 10 20 30 40 50 60 Package Limited VGS = 6 V RθJC = 0.94 oC/W VGS = 10 V T C, CASE TEMPERATURE ( oC) Maximum Continuous Drain Current vs Case Temperature Figure 11. 0.1 1 10 100 500 0.1 1 10 50 100 μs 10 ms DC 1 ms VDS, DRAIN to SOURCE VOLTAGE (V) THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE TJ = MAX RATED RθJC = 0.94 oC/W TC = 25 oC Forward BiasSafe Operating Area Figure 12. 10 -5 10 -4 10 -3 10 -2 10 -1 1 100 1000 10000 SINGLE PULSE RθJC = 0.94 oC/W TC = 25 oC t, PULSE WIDTH (sec) Single Pulse Maximum Power Dissipation Typical Characteristics T J = 25 °C unless otherwise noted |
Аналогичный номер детали - FDD86250 |
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Аналогичное описание - FDD86250 |
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