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BAP65-02.115 датащи(PDF) 4 Page - NXP Semiconductors |
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BAP65-02.115 датащи(HTML) 4 Page - NXP Semiconductors |
4 / 9 page BAP65-02 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 5 — 28 September 2010 4 of 9 NXP Semiconductors BAP65-02 Silicon PIN diode f = 100 MHz; Tj =25 Cf = 1 MHz; Tj =25 C Fig 1. Forward resistance as a function of forward current; typical values Fig 2. Diode capacitance as a function of reverse voltage; typical values (1) IF =0.5 mA (2) IF =1mA (3) IF =5mA (4) IF =10mA (5) IF = 100 mA Diode inserted in series with a 50 stripline circuit and biased via the analyzer Tee network. Tamb =25 C. Diode zero biased and inserted in series with a 50 stripline circuit. Tamb =25 C. Fig 3. Insertion loss ( s 21 2) of the diode as a function of frequency; typical values Fig 4. Isolation ( s 21 2) of the diode as a function of frequency; typical values 10 1 10−1 mld499 10−1 1 IF (mA) rD ( Ω) 10 102 020 1000 0 200 400 600 800 4 Cd (fF) VR (V) 812 16 mld500 0 1000 (1) (2) (3) (4) (5) 2000 f (MHz) 3000 0 −0.5 −0.1 −0.2 −0.3 −0.4 mld501 s21 2 (dB) 0 1000 2000 f (MHz) 3000 0 −10 −30 −40 −20 mld502 s21 2 (dB) |
Аналогичный номер детали - BAP65-02.115 |
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Аналогичное описание - BAP65-02.115 |
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