BAP65-02.115 datasheet(4/9 Pages) NXP

номер детали	BAP65-02.115

подробное описание детали	Planar PIN diode in a SOD523 ultra small SMD plastic package

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BAP65-02

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 5 — 28 September 2010

4 of 9

NXP Semiconductors

BAP65-02

Silicon PIN diode

f = 100 MHz; Tj =25 Cf = 1 MHz; Tj =25 C

Fig 1.

Forward resistance as a function of forward

current; typical values

Fig 2.

Diode capacitance as a function of reverse

voltage; typical values

(1) IF =0.5 mA

(2) IF =1mA

(3) IF =5mA

(4) IF =10mA

(5) IF = 100 mA

Diode inserted in series with a 50

 stripline circuit and

biased via the analyzer Tee network. Tamb =25 C.

Diode zero biased and inserted in series with a 50



stripline circuit. Tamb =25 C.

Fig 3.

Insertion loss (

s

21

2) of the diode as a function

of frequency; typical values

Fig 4.

Isolation (

s

21

2) of the diode as a function of

frequency; typical values

10

1

10−1

mld499

10−1

1

IF (mA)

rD

(

Ω)

10

102

020

1000

0

200

400

600

800

4

Cd

(fF)

VR (V)

812

16

mld500

0

1000

(1)

(2)

(3)

(4)

(5)

2000

f (MHz)

3000

0

−0.5

−0.1

−0.2

−0.3

−0.4

mld501

s21 2

(dB)

0

1000

2000

f (MHz)

3000

0

−10

−30

−40

−20

mld502

s21 2

(dB)

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